Effect of Sputtering Power on the Physical Properties of Cu3N films Formed by DC Magnetron Sputtering

Reddy, K. J.; Uthanna, S.

doi:10.1080/15533170701465697

Cited by 5 publications

(1 citation statement)

References 8 publications

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“…It should be emphasized that the values of the index of refraction reported in our present ellipsometric study are clearly much higher than those measured for Cu 3 N with the prism coupling technique [24]. We considered that the values of the refractive index found with the latter technique, surprisingly, around 1.5 at four wavelengths in the NIR region, are notably underestimated, taking into account that the values of the refractive index determined in our study are very consistent with those previously reported in the literature [25], calculated making use of the popular Swanepoel transmission-envelope method.…”

Section: Uv-mir Ellipsometric Analysissupporting

confidence: 87%

Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity

Márquez,

Blanco,

Mánuel

et al. 2023

Coatings

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Copper-nitride (Cu3N) semiconductor material is attracting much attention as a potential, next-generation thin-film solar light absorber in solar cells. In this communication, polycrystalline covalent Cu3N thin films were prepared using reactive-RF-magnetron-sputtering deposition, at room temperature, onto glass and silicon substrates. The very-broadband optical properties of the Cu3N thin film layers were studied by UV-MIR (0.2–40 μm) ellipsometry and optical transmission, to be able to achieve the goal of a low-cost absorber material to replace the conventional silicon. The reactive-RF-sputtered Cu3N films were also investigated by focused ion beam scanning electron microscopy and both FTIR and Raman spectroscopies. The less dense layer was found to have a value of the static refractive index of 2.304, and the denser film had a value of 2.496. The iso-absorption gap, E04, varied between approximately 1.3 and 1.8 eV and could be considered suitable as a solar light absorber.

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Section: Uv-mir Ellipsometric Analysissupporting

confidence: 87%

Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity

Márquez,

Blanco,

Mánuel

et al. 2023

Coatings

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Glycerol Vapor Assisted Cu Direct Bonding: Implications for 3D Semiconductor Packaging

Na,

Lee,

Park

et al. 2024

Adv Materials Technologies

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As the scaling down of semiconductor devices reaches its physical limits, 3D stacking packaging technology is emerging as a new miniaturization solution. Among the various 3D packaging technologies, Cu direct bonding is widely adopted due to copper's excellent electrical conductivity and the absence of intermetallic compounds for solder bumps. Since copper readily undergoes oxidation, technologies that prevent Cu surface oxidation during Cu direct bonding are essential. However, current research suggests that the methods require additional pretreatment processes, which demand high costs. In this study, a Cu direct bonding method utilizing glycerol vapor is developed to effectively streamline the pretreatment steps. The potential of glycerol as a reducing agent and antioxidant for Cu is demonstrated using a silicon die sample with a size of 10 × 10 mm2, verified through the X‐ray photoelectron spectroscopy. The Cu direct bonding for 3D semiconductor packaging is successfully performed under glycerol vapor atmosphere, without any plasma pretreatment. The cross‐section of the bonded specimens is examined by scanning electron microscopy, and mechanical reliability is assessed by die shear testing.

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Ti substituted nano-crystalline Cu3N thin films

et al. 2010

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Ti:Cu 3 N thin films were deposited on Si(111), quartz, and glass slide substrates by DC magnetron sputtering in molecular nitrogen ambient. The structural properties of Ti:Cu 3 N thin films were studied by X-ray diffraction (XRD) analysis. XRD measurements show diffraction band with peaks close to the (100) and (200) diffraction lines of cubic antiReO 3 structure of Cu 3 N. The Ti:Cu 3 N nano-crystalline size is in the range 22-27 nm. Lattice constant expansion reflects Ti incorporation causing the excess nitrogen to occur. Surface morphology shows that the N richness suppresses the grain growth. The optical absorption spectra indicate a remarkable shift to higher energies of the absorption edge due to higher N concentration and quantum size effect. Photoluminescence (PL) measurement shows interstitial N excess and Ti impurity produce shallow and deep levels, respectively. Thermal stability of the Ti:Cu 3 N films annealed at 300 and 400°C is improved in comparison with that of Ti free Cu 3 N films.

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Effect of Sputtering Power on the Physical Properties of Cu3N films Formed by DC Magnetron Sputtering

Cited by 5 publications

References 8 publications

Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity

Mid-Infrared (MIR) Complex Refractive Index Spectra of Polycrystalline Copper-Nitride Films by IR-VASE Ellipsometry and Their FIB-SEM Porosity

Glycerol Vapor Assisted Cu Direct Bonding: Implications for 3D Semiconductor Packaging

Ti substituted nano-crystalline Cu3N thin films

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