Effect of static uniaxial stress on the Raman spectrum of silicon

Anastassakis, E.; Pinczuk, A.; Burstein, E.; Pollak, Fred H.; Cardona, M.

doi:10.1016/0038-1098(70)90588-0

Cited by 618 publications

(264 citation statements)

References 4 publications

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“…At first, the extra peak shift of the GaAs LO phonon and strain in the GaAs well layers were plotted. The stress in the GaAs layer was calculated based on the amount of extra shift of the LO phonon frequency, using the following equation: 11,12 ϭ ͑ 2 cϫṽ 0 ͒͑ 2 cϫ⌬ṽ LO ͒ ps 12 ϩq͑s 11 ϩs 12 ͒ 10 9 dyn/cm 2 , ͑1͒…”

Section: Methodsmentioning

confidence: 99%

Effects of the number of periods on strain in superlattices

Nishida

Hagiwara

Teranishi

et al. 2002

Journal of Applied Physics

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Structural properties and spatial ordering in multilayered ZnMgTe/ZnSe type-II quantum dot structures J. Appl. Phys. 111, 033516 (2012) Piezoelectric superlattices as multi-field internally resonating metamaterials AIP Advances 1, 041504 (2011) Effect of built-in electric field on the temperature dependence of transition energy for InP/GaAs type-II superlattices J. Appl. Phys. 110, 123523 (2011) Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices Appl. Phys. Lett. 99, 251112 (2011) Tunable superlattice in-plane thermal conductivity based on asperity sharpness at interfaces: Beyond Ziman's model of specularity J. Appl. Phys. 110, 113529 (2011) Additional information on J. Appl. Phys. The effect of periods on the accumulation and release of stress in GaAs/AlInAs superlattices structure is reported here. It is observed that in GaAs/AlInAs superlattices, when the Indium ͑In͒ content is greater than 10%, stress accumulates monotonically as the number of period increases. In GaAs/AlInAs superlattices with an In content of 5%, the accumulated stress is larger when the number of periods is less than 10. However when the number of periods exceeds 10, it was observed that suddenly there is a significant increase in defects and stress release. However, with any further increase in period number, there is once again an accumulation of stress.

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Section: Methodsmentioning

confidence: 99%

Effects of the number of periods on strain in superlattices

Nishida

Hagiwara

Teranishi

et al. 2002

Journal of Applied Physics

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“…The degeneracy of the TO-phonon can be lifted. In the presence of strain, the frequencies can be obtained to terms linear in the strain solving the following secular equation [13,14] …”

Section: Dislocationsmentioning

confidence: 99%

Micro‐Raman study of strain fields around dislocations in GaAs

Irmer

Jurisch

2007

Physica Status Solidi (a)

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The reliability of microelectronics devices strongly depends on defects like dislocations in the semiconductor wafers. Whereas several methods are routinely used to measure the dislocation density and residual stress in wafers, there is a need of methods to characterize the strain and stress fields around single dislocations with high lateral resolution. The strain and stress fields around single edge and screw dislocations in GaAs are considered, and the corresponding Raman shifts of the phonons are calculated. Due to the finite local resolution, mappings show averaged strain values. Requirements for lateral resolution and signal/noise ratios of the Raman measurements to characterize dislocations are discussed.

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“…The thinner the layer, the more difficult the measurement. Raman determination of stress is based on an elastic theory analysis of the relationship between strain and the shift in the energy of the Raman peak for the optical phonon [27,28].…”

Section: Optical Constantsmentioning

confidence: 99%

Metrology (including Materials Characterization) for Nanoelectronics

Diebold¹

2005

AIP Conference Proceedings

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Effect of static uniaxial stress on the Raman spectrum of silicon

Cited by 618 publications

References 4 publications

Effects of the number of periods on strain in superlattices

Effects of the number of periods on strain in superlattices

Micro‐Raman study of strain fields around dislocations in GaAs

Metrology (including Materials Characterization) for Nanoelectronics

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