Effect of Steady Bias Light on Carrier Lifetime in Silicon Wafers    with Chemically Passivated Surfaces

Maekawa, Takao; Shima, Yasushi

doi:10.1143/jjap.35.l133

Cited by 18 publications

(17 citation statements)

References 6 publications

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“…vated surfaces. 6,[17][18][19] Therefore we conclude that this simplified evaluation method for light-biased measurements provides a good approximation which is better than 10% in most practical cases.…”

Section: Simplified Evaluation Methods For Light-biased Effective Lifementioning

confidence: 97%

Simplified evaluation method for light-biased effective lifetime measurements

Schuurmans

Schönecker

Burgers

et al. 1997

Applied Physics Letters

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In this letter, we present a simplified evaluation method for light-biased photoconductance decay measurements. The measured effective lifetime is shown to be a differential quantity τeff,d, which may differ significantly from the actual effective lifetime τeff. However, the actual effective lifetime can be approximated by integrating τeff,d directly over the incident power density of the bias light. The quality of the approximation depends mainly on the surface recombination velocity and the wavelength of the used bias light. However, the inaccuracy remains well below 10% for most practical cases.

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Section: Simplified Evaluation Methods For Light-biased Effective Lifementioning

confidence: 97%

Simplified evaluation method for light-biased effective lifetime measurements

Schuurmans

Schönecker

Burgers

et al. 1997

Applied Physics Letters

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“…To the best of our knowledge Horányi et al performed the first study into iodine‐ethanol (I‐E) pasivation, achieving S of <10 cm s −1 . Maekawa and Shima were later successful in reducing S to 0.36–5.5 cm s −1 . M'Saad et al diversified the field by using iodine‐methanol (I‐M) and bromine‐methanol (Br‐M) solutions and improved the surface passivation quality, reducing S to ≤0.75 cm s −1 on (100)‐orientation silicon by using I‐M .…”

Section: Types Of Temporary Surface Passivationmentioning

confidence: 99%

“…Illumination whilst silicon is immersed in I‐E or I‐M solutions has been shown to reduce the time required to reach maximum surface passivation dramatically . In this regard, illumination plays two roles in I‐E and I‐M passivation (i) dissociation of I 2 molecules into I − atoms and (ii) generation of photoexcited carriers in the silicon material which can further enhance surface reactions.…”

Section: Types Of Temporary Surface Passivationmentioning

confidence: 99%

“…In general, the standard RCA clean and HF dip prior to I‐E or I‐M passivation has proved to be a good surface pre‐treatment, where in one case a very low S of 0.75 cm s −1 was attained . In contrast there have been reports that indicate a piranha etch (H 2 SO 4 :H 2 O 2 ) or silicon etch (HF:HNO 3 ) prior to halogen‐alcohol passivation provide clean/smooth silicon surface, resulting in S of 1 to 10 cm s −1 …”

Section: Processing Issuesmentioning

confidence: 99%

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Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review

Grant

Murphy

2017

Physica Rapid Research Ltrs

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Accurate measurements of the bulk minority carrier lifetime in high-quality silicon materials is challenging due to the influence of surface recombination. Conventional surface passivation processes such as thermal oxidation or dielectric deposition often modify the bulk lifetime significantly before measurement. Temporary surface passivation processes at room or very low temperatures enable a more accurate measurement of the true bulk lifetime, as they limit thermal reconfiguration of bulk defects and minimize bulk hydrogenation. In this article we review the state-of-the-art for temporary passivation schemes, including liquid immersion passivation based upon acids, halogen-alcohols and benzyl-alcohols, and thin film passivation usually based on organic substances. We highlight how exceptional surface passivation (surface recombination velocity below 1 cm s À1 ) can be achieved by some types of temporary passivation. From an extensive review of available data in the literature, we find p-type silicon can be best passivated by hydrofluoric acid containing solutions, with superacid-based thin films showing a slight superiority in the n-type case. We review the practical considerations associated with temporary passivation, including sample cleaning, passivation activation, and stability. We highlight examples of how temporary passivation can assist in the development of improved silicon materials for photovoltaic applications, and provide an outlook for the future of the field.

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“…It is well recognized that iodine-ethanol (I-E) or iodine-methanol (I-M) solutions can passivate Si surfaces [1][2][3][4][5][6][7][8][9]. This method of surface passivation can be very valuable when a temporary and removable passivation of a Si wafer surface(s) is needed.…”

Section: Introductionmentioning

confidence: 99%

Light-Induced Passivation of Si by Iodine Ethanol Solution

et al. 2008

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We report on our observations of light-activated passivation (LIP) of Si surfaces by iodine-ethanol (I-E) solution. Based on our experimental results, the mechanism of passivation appears to be related to dissociation of iodine by the photo-carriers injected from the Si wafer into the I-E solution. The ionized iodine (I -) then participates in the formation of a Si-ethoxylate bond that passivates the Si surface. Experiments with a large number of wafers of different material parameters indicate that under normal laboratory conditions, LIP can be observed only in some samples-samples that have moderate minority-carrier lifetime. We explain this observation and also show that wafer cleaning plays an extremely important role in passivation.

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Effect of Steady Bias Light on Carrier Lifetime in Silicon Wafers with Chemically Passivated Surfaces

Cited by 18 publications

References 6 publications

Simplified evaluation method for light-biased effective lifetime measurements

Simplified evaluation method for light-biased effective lifetime measurements

Temporary Surface Passivation for Characterisation of Bulk Defects in Silicon: A Review

Light-Induced Passivation of Si by Iodine Ethanol Solution

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