2020
DOI: 10.1016/j.spmi.2019.106368
|View full text |Cite
|
Sign up to set email alerts
|

Effect of stoichiometric conditions and growth mode on threading dislocations filtering in AlN/c-Al2O3 templates grown by PA MBE

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

2
27
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 23 publications
(29 citation statements)
references
References 27 publications
2
27
0
Order By: Relevance
“…Res. Ltd., Oxfordshire, UK) on standard c-Al 2 O 3 substrates using migrationenhanced epitaxy for the 65-nm-thick nucleation layer and multi-stage metal-modulated epitaxy (MME) for the rest buffer layer at a substrate temperature varied between 780-850 • C [34][35][36]. These templates have an RMS roughness of about 0.6 nm and threading dislocation densities of ~5 × 10 9 cm −2 .…”
Section: Methodsmentioning
confidence: 99%
“…Res. Ltd., Oxfordshire, UK) on standard c-Al 2 O 3 substrates using migrationenhanced epitaxy for the 65-nm-thick nucleation layer and multi-stage metal-modulated epitaxy (MME) for the rest buffer layer at a substrate temperature varied between 780-850 • C [34][35][36]. These templates have an RMS roughness of about 0.6 nm and threading dislocation densities of ~5 × 10 9 cm −2 .…”
Section: Methodsmentioning
confidence: 99%
“…c–e) Reproduced with permission. [ 90 ] Copyright 2020, Elsevier. f) The product (stress × thickness) and incremental stress versus thickness dependences for AlN/c‐Al 2 O 3 template grown using various stoichiometric conditions.…”
Section: Comparative Analysis Of Mbe and Mocvd For Growing ML Gan/aln...mentioning
confidence: 99%
“…[ 16,62,89 ] Recently, we developed an alternative method (without GaN inserts) for reducing the total TD density to the level of 10 9 cm −2 due to optimization of migration‐enhanced epitaxy of AlN nucleation layers on c ‐ Al 2 O 3 substrates and elaboration of the two‐stage growth of AlN buffer layers, using metal‐modulated epitaxy (MME), to filter TDs and achieve finally the atomically smooth surface morphology with RMS roughness of 0.6 nm, as shown in Figure 3c,e. [ 90 ] Moreover, Figure 3f shows the discovered possibility to grow by this method thick‐enough AlN buffer layers controllably either without any stress or with only a small tensile stress (<0.2 GPa), which excludes cracking phenomena in these templates. [ 91 ]…”
Section: Comparative Analysis Of Mbe and Mocvd For Growing ML Gan/aln...mentioning
confidence: 99%
See 1 more Smart Citation
“…1(a), is grown by plasmaassisted molecular beam epitaxy (Compact21T, Riber) on a double-side polished c-sapphire wafer (c-Al2O3). Initially, a 1.6 µm thick AlN layer was grown using two-stage metalmodulated epitaxy to reduce the threading dislocation density to mid-10 9 cm -2 and to achieve an atomically smooth surface, as detailed in [16]. Then, 25 GaN QWs with a thickness of 1.8 nm, separated by 5nm thick AlN barriers layers, were formed using the sub-monolayer digital alloying method described in [17].…”
Section: Sample Overview and Optical Propertiesmentioning
confidence: 99%