We present an approach to calculation of point defect optical and thermal ionization energies based on the highly accurate quantum Monte Carlo methods. The use of an inherently many-body theory that directly treats electron correlation offers many improvements over the typically-employed density functional theory Kohn-Sham description. In particular, the use of quantum Monte Carlo methods can help overcome the band gap problem and obviate the need for ad-hoc corrections. We demonstrate our approach to the calculation of the optical and thermal ionization energies of the F-center defect in magnesium oxide, and obtain excellent agreement with experimental and/or other high-accuracy computational results.From electronics to optoelectronics to photovoltaics, point defects influence and even dominate the properties of semiconducting materials [1][2][3][4][5][6]. Quantitative descriptions of the effect of point defects on electronic, optical, and transport properties is critical to enabling point-defect engineering for materials design. However, accurate prediction of point-defect energetics, thermal ionization energies, and optical transition energies from first principles remains a challenge. Currently, the most widely-used approach based on conventional density functional theory (DFT) suffers from poor descriptions of band gaps that render difficult the accurate description of mid-gap defect states [5,[7][8][9]]. Here we demonstrate that, by contrast, an inherently many-body approach based on quantum Monte Carlo (QMC) methods [10,11] can eliminate these problems and enable high-accuracy calculations of point defect optical and thermal ionization energies. Our computed optical transition energies are in excellent agreement with experimental and/or other highaccuracy computational results for the same system [12], and demonstrate that QMC can obtain quantitatively accurate descriptions.