Effect of substrate bias on crystal structure and thermal stability of sputter-deposited ZnO films

Two dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process

“…First a 300-nm-thick ZnO thin film is rf-sputtered on Corning Eagle-2000 glass at room temperature, followed by a post-annealing at 600°C for 30 min to reinforce the grain formation. 24,25 Then 200-nm-thick titanium is deposited by e-beam evaporation and patterned as the coplanar electrical contacts. 26,27 Finally, Mg x Zn 1−x O layer with various thicknesses and Mg contents ͑x = 0.15, 0.2, 0.3, 0.4, and 0.5͒ is rf-sputtered at room temperature upon ZnO to form the heterostructure.…”

Substrate Biasing during Plasma-Assisted ALD for Crystalline Phase-Control of TiO2 Thin Films

“…[7][8][9] Also for ZnO, the influence of RF substrate biasing was demonstrated and the preferred orientation, the crystal size, and the thermal stability of the films were shown to be affected by the bias power. 10 Being a different deposition method ruled by surface chemistry, it is also interesting to study the influence of substrate biasing for the case of plasma-assisted ALD.…”

Reduced electrical resistivity in TiO2:Nb/ZnO:Ga film by thermal annealing

“…The resistivity decrease of doped ZnO by heat treatment is often attributed to the improvement of the levels of crystalline perfection, carrier scattering, and dopant efficiency. However, thermal annealing simultaneously promotes the dissociation of the excessive atoms of zinc or oxygen from the crystal lattice of ZnO, [20][21][22] which also affects electrical properties. To investigate the diffusion of elements, the depth profiles of elements in the TNO/GZO films, which were measured by secondary ion mass spectroscopy before and after thermal annealing, were compared.…”