2006
DOI: 10.1016/j.jcrysgro.2006.09.056
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Effect of substrate dislocations on the Hg in-diffusion in CdZnTe substrates used for HgCdTe epilayer growth

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Cited by 6 publications
(2 citation statements)
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“…Although several studies have shown the residual stress of (111) Cd 0 96 Zn 0 04 Te single crystals [10] and dislocation after mechanical polishing and chemical etching [11], these studies have not related to the nanomechanical properties of CdZnTe crystal. Because CdZnTe crystal has the zincblende structure, which shows extremely mechanical anisotropy, while the mechanical anisotropy is especially influential on the orientation-dependent results obtained when machining of CdZnTe wafers, but the effects of mechanical anisotropy on machining of CdZnTe wafers have not been reported.…”
Section: Introductionmentioning
confidence: 98%
“…Although several studies have shown the residual stress of (111) Cd 0 96 Zn 0 04 Te single crystals [10] and dislocation after mechanical polishing and chemical etching [11], these studies have not related to the nanomechanical properties of CdZnTe crystal. Because CdZnTe crystal has the zincblende structure, which shows extremely mechanical anisotropy, while the mechanical anisotropy is especially influential on the orientation-dependent results obtained when machining of CdZnTe wafers, but the effects of mechanical anisotropy on machining of CdZnTe wafers have not been reported.…”
Section: Introductionmentioning
confidence: 98%
“…The machinability and machining damages of CdZnTe crystal are related to the nanomechanical properties, so it is comparatively important to investigate the nanomechanical properties for preparation of high-resolution HgCdTe and CdZnTe detectors. Some studies have shown that there are residual stress and dislocations on (111) Cd 0.96 Zn 0.04 Te single crystals after mechanical polishing and chemical etching [6][7]. However, few studies discuss the nanomechanical properties of CdZnTe crystal.…”
Section: Introductionmentioning
confidence: 99%