Effect of substrate misorientation on tear-drop-like hillock defect densities in InP and GaInAsP grown by metalorganic chemical vapor deposition

InP substrate evaluation by MOVPE growth of lattice matched epitaxial layers

“…These defects have been observed in other investigations performed using MOVPE and CBE [4,7]. Nakamura et al [4] correlated the density of ''tear-drop-like'' mound defects to the etch pit density (EPD) and provided evidence that these defects are associated with dislocations in the InP substrates formed during boule growth. They went on to show that the size of the ''tear drop-like'' defects correlated to the thickness of the epitaxial InP layer.…”

“…Prior studies on InP epitaxy document the importance of small intentional miscuts to achieve low defect densities [4][5][6][7]. The optimal miscut angle and crystallographic direction for InP depend on growth temperature and growth rate [4]. Many miscut directions provide a sufficiently ordered surface with an adequately low roughness.…”

“…Prior investigation of the growth of these alloys by metal-organic vapor phase epitaxy (MOVPE) allows electronic and optoelectronic epitaxial structures to be fabricated [1][2][3]. Prior studies on InP epitaxy document the importance of small intentional miscuts to achieve low defect densities [4][5][6][7]. The optimal miscut angle and crystallographic direction for InP depend on growth temperature and growth rate [4].…”

Wafer fusion: materials issues and device results

“…However, too high a misorientation can give rise to step bunching, also creating surface roughness. The optimum misorientation will produce smooth surface morphology; this depends on growth parameters that influence the diffusion length of the atomic species at the surface: temperature, growth rate and V-III ratio [27]. We chose a misorientation of 0.2 .…”

“…The bonding of off-axis substrates has been investigated for GaInP on GaAs [48] and has revealed that small deviations from on-axis bonding result in dramatic increases in junction resistance. GaAs-InP bonding between different substrate orientations also results in reduced junction conductivity [27]. Since the surfaces of different III-V compound semiconductors have different oxidation properties and terminations, certain surface preparations and procedures may produce different results on different materials.…”