Role of surface diffusion during selective area MOVPE growth of InP

Control of abnormal edge growth in selective area MOVPE of InP

“…The cross-sectional area of the ridge was also affected by the surface temperature and the concentration of group III precursor; i.e., the surface flux of the precursor, as reported in the literature [19]. In summary, the value of S e was a maximum at $823 K. The increase in the precursor concentration led to a parabolic increase in S e .…”

“…Therefore, we started a comprehensive study of edge growth. Following on from the first publication [19], we report on the time-dependent behavior of the edge growth and the effect of the stripe direction. In addition, we introduce a numerical simulation of the edge growth, which considers the surface diffusion of a precursor in order to analyze the edge growth quantitatively.…”

Vapor phase diffusion and surface diffusion combined model for InGaAsP selective area metal–organic vapor phase epitaxy

“…This trend indicates that the amount of the precursor migrating into (1 0 0) plane varied with time. Therefore, the diffusion of a precursor from a mask, which was assumed in the preceding study [3,5], is not realistic in the present case. Instead, considering that the area of (1 1 1)B plane increases with time as shown in Fig.…”

“…However, it is difficult to predict device characteristics based on the mask pattern used in SAG. Based on the research of the kinetics in the SAG of GaAs and InP layers [2][3][4][5][6][7][8][9][10][11], we have established the precise design method of bandgap wavelength originated from the variation of thickness and composition, except at near mask edges ($10 mm) [12]. That method employed the vapor-phase diffusion model [8,13].…”

InP-based photonic circuits: Comparison of monolithic integration techniques

“…Due to the fact that this technique is exploiting the diffusion of precursors in the gas phase, as well as diffusion on the surface of the mask, the shape of the grown ridge near the mask edge is strongly influenced by the grown conditions and by the direction of the stripes. The abnormal edge growth can be controlled by adjusting several growth parameters [51,52]. In addition, the diffusion coefficients of the precursors of the group III-materials at any process condition are different; hence the composition of the ternary and quaternary material is influenced by the mask dimensions [53,54].…”