CuInSe2 (CIS) quantum dots (QDs) have been prepared by radio-frequency
reactive magnetron sputtering from a ternary compound target on glass substrates
coated with indium tin oxide at low temperatures. Uniformly distributed CIS QDs
with a regular shape can be grown in this way. The average lateral size of
the dots can be varied between 40 and 80 nm by making appropriate
choices of substrate temperature, power density, and total CIS coverage.