2008
DOI: 10.1021/jp073967z
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Effect of Surface Chemistry on Mechanical Energy Dissipation:  Silicon Oxidation Does Not Inherently Decrease the Quality Factor

Abstract: The rate of energy dissipation in megahertz-range micromechanical silicon resonators is unaffected by the controlled oxidation of one-half monolayer of surface sites, thereby proving that silicon oxidation does not inherently decrease the quality factor (Q). Homogeneously mono-oxidized surfaces were prepared by the controlled reaction of dodecyl aldehyde with H-terminated silicon surfaces to form dodecoxy-terminated surfaces (C 12 H 25 O-Si). The existence of an approximately half monolayer of Si-O-R species (… Show more

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Cited by 7 publications
(5 citation statements)
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“…The improved performance is likely due to cleaner device surfaces in the absence of any liquid contact. Consistent with [39], chain length-matched alkene and aldehyde gave similar Q at room temperature. At low temperature, we found the alkyl monolayer to be slightly superior to the alkoxide monolayer.…”
mentioning
confidence: 54%
“…The improved performance is likely due to cleaner device surfaces in the absence of any liquid contact. Consistent with [39], chain length-matched alkene and aldehyde gave similar Q at room temperature. At low temperature, we found the alkyl monolayer to be slightly superior to the alkoxide monolayer.…”
mentioning
confidence: 54%
“…Reducing the size of the resonators is challenging as it is directly correlated with reducing the quality factor 10 . Therefore, with the advent of Micro-and Nano-ElectroMechanical Systems (MEMS/NEMS), much work has been directed towards artificially improving the quality factor: On the one hand, using passive approaches, including acoustic reflectors 11 , geometry optimization 12 , surface treatments 13 and dissipation dilution due to intrinsic stress 14 . All of them genuinely increase the quality factor, thus reducing the amount of thermomechanical noise (in force) allowed to enter the system; On the other hand, we have the so-called active approaches, mainly parametric pumping (tuning the resonance frequency at twice the rate of said frequency) [15][16] and feedback proportional to the velocity 17 .…”
Section: Introductionmentioning
confidence: 99%
“…To investigate the role of silicon-oxygen bonds, the performance of dodecoxy-(C 12 H 25 O-) and dodecyl-(C 12 H 25 -) resonators were compared. 18 These monolayers differ by a single Si-O-C linkage at the interface. Nearly-identical performance was observed for these two surface terminations.…”
Section: Resultsmentioning
confidence: 99%