Colloidal PbS quantum dots (QDs) have provoked a revolution in the field of optoelectronic devices owing to their low-cost fabrication processing and excellent physical properties. Recently, the fabrication of nanostructured PbS QDs photovoltaic (PV) devices based on zinc oxide (ZnO) nanowires array appeared as an effective strategy for improving the overall device performance. On This article is protected by copyright. All rights reserved. 2 the other hand, the infiltration of PbS QDs in a densely packed ZnO nanowire array not only impedes the efficient charge extraction but also increases the surface trap states and charge carrier recombination leading to degraded PV performance. Despite its potentially strong impact on the device performance, the role of nanowire areal density on photon absorption and exciton dynamicshas not yet been studied and still remains unexplored. Here, for the first time, we tune the areal density of ZnO nanowires through controlling the precursor concentration and study its impact on PbS QDs PV performance. It is found that the device with optimized ZnO nanowire areal density yields significantly increased power conversion efficiency (PCE) (10.1% vs. 8.5% of control nanowirebased device) due to improved light scattering and reduced surface recombination states. To further improve the photovoltaic performance, we treated the ZnO nanowire surface with hydrogen plasma, which has not been studied before in QDs PVs. Transient photovoltage (TPV) measurement reveal that this passivation process noticeably reduces the nonradiative charge recombination yielding a champion device with a remarkable PCE of 10.8%.