Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Bernát, J.; Javorka, P.; Fox, A.; Marso, Michel; Lüth, H.; Kordoš, P.

doi:10.1016/s0038-1101(03)00238-7

Cited by 58 publications

(34 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…AlN was used as the nucleation layer. The HEMTs were processed using conventional fabrication steps [6]. The mesa isolation was realized using Ar + sputtering, which was followed by the deposition of ohmic contact metallization.…”

Section: Methodsmentioning

confidence: 99%

Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

Gregušová

Bernát

Držík

et al. 2005

phys. stat. sol. (c)

Self Cite

View full text Add to dashboard Cite

PACS 81.65.Rv, 85.30.De, 85.30.Tv This paper reports on properties of intentionally undoped AlGaN/GaN/sapphire-based high electron mobility transistors (HEMTs) before and after passivation with SiO 2 and Si 3 N 4 . Our results indicate that the DC performance of the AlGaN/GaN HEMTs improved significantly as the stress in the passivation layer increased from compressive to tensile. It corresponded to changes in the sheet carrier concentration. Unlike the DC properties, RF properties of the HEMTs were less sensitive to the stress.

show abstract

Section: Methodsmentioning

confidence: 99%

Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

Gregušová

Bernát

Držík

et al. 2005

phys. stat. sol. (c)

Self Cite

View full text Add to dashboard Cite

show abstract

“…All the devices were unpassivated in order to avoid any confusion caused by the passivation layer, which may change the stress in the AlGaN layer and alter the piezoelectric polarization [28], [29]. All the HEMT devices have a gate length of 1 µm, a source-gate spacing of L sg = 1 µm and a gate-drain spacing of L gd = 2 µm.…”

Section: Device Fabricationmentioning

confidence: 99%

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Cai

Zhou

Lau

et al. 2006

IEEE Trans. Electron Devices

507

286

View full text Add to dashboard Cite

“…The capacitance-voltage analysis showed relatively low interface state density of 1 x 10 11 cm -2 eV -1 or less at the SiN x /GaN interface [6,33]. This seems to be main reason that the SiN x -based surface passivation effectively suppress current collapse in GaN MESFETs [34] and AlGaN/GaN HFETs [4,5,[35][36][37][38]. From XPS analysis on the annealed AlGaN surface after removing a SiN x passivation layer, we found that the SiN x passivation was also effective in suppressing surface disorder of AlGaN during high-temperature annealing.…”

Section: Surface Passivation Processes For Algan Surfacesmentioning

confidence: 99%

Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

Hashizume

Hasegawa

2004

Applied Surface Science

179

View full text Add to dashboard Cite

Effects of device processing on chemical and electronic properties of AlGaN surfaces were investigated. The X-ray photoelectron spectroscopy analysis showed serious deterioration such as stoichiometry disorder and nitrogen deficiency (N deficiency) at the AlGaN surfaces processed by high-temperature annealing, H 2 -plasma cleaning, dry etching in CH 4 /H 2 /Ar plasma and deposition of SiO 2 . This resulted in high density of surface states at the processed AlGaN surface. Furthermore, the N deficiency introduced a localized deep donor level related to N vacancy (V N ) at AlGaN surfaces. Such electronic states governed by a V N -related deep donor and surface state continuum can cause strong Fermi level pinning at the AlGaN surface, reduction of the barrier height and excess leakage currents at the AlGaN Schottky interface and serious drain current collapse in AlGaN/GaN heterostructure field effect transistors. The SiN x -or Al 2 O 3 -based passivation scheme with a combination of a remote N 2 -plasma treatment was found to be effective in suppressing formation of V N -related surface defects at AlGaN surfaces. a)

show abstract

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

Cited by 58 publications

References 15 publications

Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

Influence of passivation induced stress on the performance of AlGaN/GaN HEMTs

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes

Contact Info

Product

Resources

About