Effect of surface states on electron transport in individual ZnO nanowires

Optical properties and microstructure of 2.02-3.30 eV ZnCdO nanowires: Effect of thermal annealing

“…In ZnO nanowires, a charge depletion region exists at the surface 19 confining the carriers within the nanowire core. This effect is likely reduced in ZnCdO since the residual n-type concentration is typically larger than in ZnO, and so the surface-related depletion region should be thinner.…”

On the origin of white photoluminescence from ZnO nanocones/porous silicon heterostructures at room temperature

“…Indeed, its absence from our spectra could be explained by the large number of surface states expected in the ZnO nanocones. Such surface states are known to act as efficient electron traps that lead to strong charge carrier depletion and to very low electron density in the conduction band [30,[44][45][46]. Indeed, previous studies of single ZnO NWs grown on crystalline Si using the same fabrication system and similar growth conditions as the ones used here have shown that the electrical resistance of the NW is very large and that it is reduced by several orders of magnitude when surface states are passivated with a MgO shell [35,37].…”

ZnO Nanorods Arrays and Heterostructures for the High Sensitive UV Photodetection

“…The decrement of current is more prominent in the lower bias voltage and at higher bias voltage it reached very close to the dark current of asgrown NWs. It is known that when a metal is brought in contact with semiconductor, it induces band bending due to the equilibrium of Fermi level (Liao et al, 2007;Dayeh et al, 2007). Depending on the difference in the work-functions of metal and semiconductor, two types of contacts have been formed at the metal semiconductor interface.…”