Effect of surface treatment of sputtered nickel oxide in inverted perovskite solar cells

Pandian, Muthu Gomathy M.; Khadka, Dhruba B.; Shirai, Yasuhiro; Yanagida, Masatoshi; Kitamine, Saeko; Alghamdi, Amira R.; Subashchandran, Shanthi; Miyano, Kenjiro

doi:10.1016/j.tsf.2022.139486

Cited by 8 publications

(2 citation statements)

References 40 publications

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“…As for examples Pt/SeO 2 in thin film form is mentioned well performing as optical receivers employable in terahertz and 5 G/6 G communication technology [1]. Nickel oxide also displayed novel solar cell characteristics presented by open circuit voltage of 1.1 V and power conversion efficiency of ∼13.52% [2]. In addition, tungsten oxide is one of the oxides that also have attracted the attention of research society due to the wide range of applications they occupy.…”

Section: Introductionmentioning

confidence: 99%

Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters

Alkhamisi¹,

Qasrawi

Khanfar

2023

Phys. Scr.

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Herein amorphous tungsten oxide thin films of thicknesses of 300 nm are coated onto semitransparent Pb films (100 nm) by the thermal evaporation technique under a vacuum pressure of 10-5 mbar. Optical investigations in these films have shown that Pb nanosheets enhances the light absorbability in the visible and infrared ranges of light without significant change in the energy band gap value. In addition deep analyses of the optical conductivity and terahertz cutoff frequency spectra of the Pb/WO3 optical filters revealed that the cutoff frequency value in the visible range of light is invariant with light signal energy indicating the possibly of filtering none-monochromatic light signals. On the other hand imposing an ac signal between the terminals of Pb/WO3/Au devices has proofed the ability of the device to perform as low pass and as band stop filters workable in the microwave frequency domain. The microwave cutoff frequency for this device reached ~9 GHz nominating it for use in 5G mobile technology. The current study showed that coating of tungsten oxide onto semitransparent Pb substrate and coverage small area of the top contact with Au can allow functioning the device as gigahertz/ terahertz band filters suitable for communication technology.

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Section: Introductionmentioning

confidence: 99%

Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters

Alkhamisi¹,

Qasrawi

Khanfar

2023

Phys. Scr.

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“…Sputtered NiO x has been used as the HTL for perovskite solar cells because the NiO x layer can be sputtered on ITO (indium tin oxide) at RT. [8][9][10][11][12][13][14][15][16][17][18] Therefore, all production processes of the perovskite solar cells can be kept below ca. 100 °C and be completed quickly.…”

Section: Introductionmentioning

confidence: 99%

Surface modification of sputtered NiO_x hole transport layer for CH₃NH₃PbI₃ perovskite solar cells

Yanagida

Nakamura

Yoshida

et al. 2023

Jpn. J. Appl. Phys.

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The modification of the sputtered NiOx (x≧1)/CH3NH3PbI3 interface by 2-(3,6-dimethoxy-9H-carbazol-9-yl) ethyl] phosphonic acid (MeO-2PACz) considerably enhances the power conversion efficiency of the perovskite solar cells whose structure is ITO/NiOx/CH3NH3PbI3/[6,6]-phenyl C61 butyric acid methyl ester (PCBM)/Aluminum-doped zinc oxide (AZO)/Ag. In devices without MeO-2PACz, the internal quantum efficiency (IQE) above 450 nm increases with the increase of NiOx thickness from 4 nm to 53, although even in the thickest case, the IQE never reaches 90%. On the other hand, devices with MeO-2PACz modified NiOx show thickness insensitive IQE of ca. 90%. We propose that (1) MeO-2PACz effectively fill the pinholes in thinner NiOx and (2) it passivates the carrier trapping/recombination defects at the NiOx/perovskite interface.

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Reversible Entropy‐Driven Defect Migration and Insulator‐Metal Transition Suppression in VO₂ Nanostructures for Phase‐Change Electronic Switching

et al. 2023

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Oxygen defects are among essential issues and required to be manipulated in correlated electronic oxides with insulator-metal transition (IMT). Besides, surface and interface control are necessary but challenging in field-induced electronic switching towards advanced IMT-triggered transistors and optical modulators. Herein, we demonstrated reversible entropy-driven oxygen defect migrations and reversible IMT suppression in vanadium dioxide (VO 2 ) phase-change electronic switching. The initial IMT was suppressed with oxygen defects, which is caused by the entropy change during reversed surface oxygen ionosorption on the VO 2 nanostructures. This IMT suppression is reversible and reverts when the adsorbed oxygen extracts electrons from the surface and heals defects again. The reversible IMT suppression observed in the VO 2 nanobeam with M2 phase is accompanied by large variations in the IMT temperature. We also achieved irreversible and stable IMT by exploiting an Al 2 O 3 partition layer prepared by atomic layer deposition (ALD) to disrupt the entropy-driven defect migration. We expected that such reversible modulations would be helpful for understanding the origin of surface-driven IMT in correlated vanadium oxides, and constructing functional phase-change electronic and optical devices.

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Effect of surface treatment of sputtered nickel oxide in inverted perovskite solar cells

Cited by 8 publications

References 40 publications

Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters

Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters

Surface modification of sputtered NiO_x hole transport layer for CH₃NH₃PbI₃ perovskite solar cells

Reversible Entropy‐Driven Defect Migration and Insulator‐Metal Transition Suppression in VO₂ Nanostructures for Phase‐Change Electronic Switching

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Effect of surface treatment of sputtered nickel oxide in inverted perovskite solar cells

Cited by 8 publications

References 40 publications

Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters

Lead-tungsten oxide interfaces designed as gigahertz/terahertz filters

Surface modification of sputtered NiOx hole transport layer for CH3NH3PbI3 perovskite solar cells

Reversible Entropy‐Driven Defect Migration and Insulator‐Metal Transition Suppression in VO2 Nanostructures for Phase‐Change Electronic Switching

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Product

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Surface modification of sputtered NiO_x hole transport layer for CH₃NH₃PbI₃ perovskite solar cells

Reversible Entropy‐Driven Defect Migration and Insulator‐Metal Transition Suppression in VO₂ Nanostructures for Phase‐Change Electronic Switching