Effect of surfactants on the data directionality and learning behaviour of Al/TiO2/FTO thin film memristor-based electronic synapse

Dongale, Tukaram D.; Desai, N. B.; Khot, Kishorkumar V.; Mullani, Navaj B.; Pawar, Pravin S.; Tikke, R. S.; Patil, Vithoba L.; Waifalkar, P. P.; Patil, Prasad; Kamat, Rajanish K.; Patil, Pramod S.; Bhosale, Popatrao N.

doi:10.1007/s10008-016-3459-1

Cited by 21 publications

(6 citation statements)

References 16 publications

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“…In the biological synapse, improvement in the strength of synaptic weights results in the better learning [33]. In many memristive-based electronic synapses, current (i) was considered as synaptic weights [33][34][35]. Considering the incremental I SET and I RESET or synaptic weights, the Al/MnO 2 /SS MIM device is suitable for the neuromorphic applications.…”

Section: Resultsmentioning

confidence: 99%

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

et al. 2018

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In the present investigation, we have experimentally demonstrated the coexistence of filamentary and homogeneous resistive switching mechanisms in single Al/MnO 2 /SS thin film metal-insulator-metal device. The voltage-induced resistive switching leads to clockwise and counterclockwise resistive switching effects. The present investigations confirm that the coexistence of both RS mechanisms is dependent on input voltage, charge-flux and time. Furthermore, the non-zero I-V crossing locations and crossovers hysteresis loops suggested that the developed device has memristive and meminductive properties. The memristive and meminductive memory effects are further confirmed by electrochemical impedance spectroscopy. The results suggested that the mem-device dynamics and electrochemical kinetics during different voltage sweeps and sweep rates are responsible for the coexistence of filamentary and homogeneous resistive switching mechanisms as well as memristive and meminductive memory effect in single Al/MnO 2 /SS metal-insulator-metal device. The coexistence of both RS effects is useful for the development of high-performance resistive memory and electronic synapse devices. Furthermore, the coexistence of memristive and meminductive memory effects is important for the development of adaptive and self-resonating devices and circuits.

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Section: Resultsmentioning

confidence: 99%

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

et al. 2018

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“…The memristive device is a broader class of nonlinear circuit element which can be identified by a pinched hysteresis loop in current–voltage ( I – V ) plane . Figure a,b represents the I – V characteristics of the Ag/Melanin/SS device on the linear and semi‐log scale, respectively.…”

Section: Resultsmentioning

confidence: 99%

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Gurme

Dongale

Surwase

et al. 2018

Physica Status Solidi (a)

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A Ag/melanin/SS memristive device with remarkably good endurance and retention properties is demonstrated using natural melanin isolated from bacterium Aeromonas sp. SNS. Purified and characterized melanin is used for the development of a non‐volatile memory device. The device is operated under electroforming‐free mode and requires only ±0.6 V resistive switching voltage. 2 × 104 switching cycles endurance is achieved with an approximately 10X memory window at 0.2 V read voltage. In addition to this, the low resistance state (LRS) and high resistance state (HRS) are stable over 103 s without any observable degradation in the resistance states. Standard deviation and coefficient of variation of LRS and HRS are very small compared to other memory devices reported in the literature. Furthermore, the Ag/melanin/SS memristive device shows rich nonlinear behavior and possesses negative differential resistance effect during positive bias. Charge transportation in the device is due to the ohmic and space charge limited current. The formation and breaking of the conductive filament are responsible for the bipolar resistive switching effect due to hybrid electronic‐ionic charge transportation. Rich I–V characteristics, very low switching voltage, and remarkable nonvolatile memory performance make melanin a strong candidate for next generation organic non‐volatile memory devices.

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“…Transition metal-oxide-based memristor systems may be the most widely used (TMOs). Many different types of materials are utilised to make metal-oxide memristors, including HfOx [59][60][61][62][63][64][65][66][67], TiOx [68][69][70][71][72][73], WOx [74][75][76][77][78], SiOx [79], [80], TaOx/TiOx [81,82], NiOx [83][84][85], TaOx [86][87][88], FeOx [89], AlOx [90], [91], TaOx/TiOx [81], [82], HfOx/ZnOx [92], and PCMO [93][94][95][96][97][98]. The quantity and sorts of resistance states that can be created by various metal oxide memristor types determine the range of weight values that can be stored on the memristor.…”

Section: Materials and Devicesmentioning

confidence: 99%

Neuromorphic Computing between Reality and Future Needs

Ahmed¹,

Shereif²

2023

Artificial Intelligence

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Neuromorphic computing is a one of computer engineering methods that to model their elements as the human brain and nervous system. Many sciences as biology, mathematics, electronic engineering, computer science and physics have been integrated to construct artificial neural systems. In this chapter, the basics of Neuromorphic computing together with existing systems having the materials, devices, and circuits. The last part includes algorithms and applications in some fields.

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Effect of surfactants on the data directionality and learning behaviour of Al/TiO2/FTO thin film memristor-based electronic synapse

Cited by 21 publications

References 16 publications

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device

An Organic Bipolar Resistive Switching Memory Device Based on Natural Melanin Synthesized From Aeromonas sp. SNS

Neuromorphic Computing between Reality and Future Needs

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