“…Memristors can be prepared using many different resistance switching (RS) materials, such as oxides [6][7][8][9][10][11][12], sulphides [13,14], carbon [15,16], amorphous silicon [17,18] and organic materials [19,20]. Zinc oxide (ZnO) is a popular choice due to its low cost, wide band gap (3.37 eV), low synthesis temperature, controllable electrical behaviour, chemical stability, electrochemical activity, biocompatibility and eco-friendliness [21,22].…”