2022
DOI: 10.1016/j.mssp.2022.107108
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Effect of swift heavy ion irradiation on the resistive random access memory performance of sputter deposited zinc rich zinc oxide thin films

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Cited by 4 publications
(1 citation statement)
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“…Memristors can be prepared using many different resistance switching (RS) materials, such as oxides [6][7][8][9][10][11][12], sulphides [13,14], carbon [15,16], amorphous silicon [17,18] and organic materials [19,20]. Zinc oxide (ZnO) is a popular choice due to its low cost, wide band gap (3.37 eV), low synthesis temperature, controllable electrical behaviour, chemical stability, electrochemical activity, biocompatibility and eco-friendliness [21,22].…”
Section: Introductionmentioning
confidence: 99%
“…Memristors can be prepared using many different resistance switching (RS) materials, such as oxides [6][7][8][9][10][11][12], sulphides [13,14], carbon [15,16], amorphous silicon [17,18] and organic materials [19,20]. Zinc oxide (ZnO) is a popular choice due to its low cost, wide band gap (3.37 eV), low synthesis temperature, controllable electrical behaviour, chemical stability, electrochemical activity, biocompatibility and eco-friendliness [21,22].…”
Section: Introductionmentioning
confidence: 99%