This study looks at the results of resistive random-access memory (ReRAM) devices made by using structural layers of Gold (Au)/Zinc oxide (ZnO)/Indium tin oxide (ITO). An annealed device resistance ratio increases nonlinearly. After annealing, the resistance ratio was found to be 102 at 1V. The device's switching properties improved after annealing. Rutherford backscattering spectrometry determined the thickness of the deposited zinc oxide layer to be approximately 140±10 nm. The zinc atomic fractions were calculated to be 60% and oxygen 40% by the SIMNRA simulation. The ZnO-based structures were also characterized and analyzed using X-ray powder diffraction, scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. The current study reveals that annealing improves the performance of ReRAM devices.

The present study describes the impact of ion irradiation on the switching behaviour of zinc oxide formed on indium tin oxide (ITO) substrates by radio-frequency sputtering. When annealed ZnO-ITO structures are bombarded with Ag+8 with a fluence of 1012 ions/cm2, the resistance ratio was found to be the order 103 at 1 V. In pristine samples (annealed in argon) the resistance ratio was found to be 102 at 1V. Variations in density defect generated by swift heavy ion irradiation gave birth to conducting filaments, which are the principal source of switching in ZnO, as opposed to changes in vacancies of oxygen at the interface.

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