ZnO based RRAM performance enhancement by 100 MeV Ag9+ irradiation

Kaushik, Shikha; Pandey, Sujata; Singhal, Rahul; Kumar, Ranjit

doi:10.1016/j.apsadv.2022.100260

Cited by 6 publications

(3 citation statements)

References 53 publications

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“…Switching characteristics in the films is attributed to the presence of defects in the films such as oxygen vacancies which tend to form a conducting filament under the applied voltage sweep, near to a specific value of potential. [19,24] These conducting channels annihilate when the potential is away from the desired value. Therefore, appearance and annihilation of such conducting channels gives to the sudden change in resistance.…”

Section: Electrical Properties By Source Metermentioning

confidence: 99%

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Sputter Deposited Mn‐doped ZnO Thin Film for Resistive Memory Applications

et al. 2022

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Transition metal doped Zinc oxide (ZnO) thin films with wide band gap semiconducting nature have diverse range of applications including, gas sensors, optical and optoelectronic devices, electronics and spintronics spintronic devices etc. In the present study, Manganese (Mn)‐doped ZnO thin films deposited on glass substrates using RF‐magnetron sputtering have been investigated for their optical and electrical behavior aiming at resistive random access memory applications. To study the influence of Mn doping and correlation between the structural and the physical properties of the films, the samples were characterized by X‐ray Diffraction (XRD), Raman spectroscopy, Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive X‐ray Spectroscopy (EDS), UV‐VIS spectrophotometry and X‐ray photoelectron spectroscopy (XPS). The films are found to be crystalline and a decrease in lattice parameter from 2.6049 Å to 2.5845 Å, an increase in optical band gap from 3.27 eV to 3.35 eV and a decrease in Urbach energy from 0.222 eV to 0.171 eV, is observed with increase in Mn‐concentration. The electrical performance of the film with highest Mn‐content is found to be more suitable for resistive memory applications. Tailoring the electrical behavior of the film by incorporating Mn as dopant is an important approach to find suitable material combination for novel memory devices.

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Section: Electrical Properties By Source Metermentioning

confidence: 99%

“…[19][20][21][22][23] Recently, significant enhancement in the RRAM properties in ZnO thin films has been reported by irradiating the films with 100 MeV Ag 9 + ions. [24] by tailoring the defect-density the electrical properties and the switching characteristics of ZnO thin films can be tuned.…”

Section: Introductionmentioning

confidence: 99%

Sputter Deposited Mn‐doped ZnO Thin Film for Resistive Memory Applications

et al. 2022

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“…Memristors can be prepared using many different resistance switching (RS) materials, such as oxides [6][7][8][9][10][11][12], sulphides [13,14], carbon [15,16], amorphous silicon [17,18] and organic materials [19,20]. Zinc oxide (ZnO) is a popular choice due to its low cost, wide band gap (3.37 eV), low synthesis temperature, controllable electrical behaviour, chemical stability, electrochemical activity, biocompatibility and eco-friendliness [21,22].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of composite films for ZnO-based memristors with superior stability

Cao,

Liu,

et al. 2024

Mater. Res. Express

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Memristors have unique non-volatile characteristics that potentially can emulate biological synapses for applications in neural computing systems. However, unsolved random formation of conductive filaments in these devices can cause various unreliability problems. In this work, films of a composite of ZnO nanoparticles and carbon nanotubes were prepared as a functional layers for memristors by an in-situ growing strategy (ZnO@CNT-IS) using a straightforward high-temperature annealing treatment. This approach allowed for the formation of a high-quality films with uniform loading of ZnO nanoparticles on the carbon nanotubes, which contributed to a lower formation energy for oxygen vacancies and increased electron transfer rate. As a result, the memristors exhibited faster switching response speed, lower power consumption, and a stabilised switching ratio even after 2000 switching cycles. Based on the analog switching behaviour, the ZnO@CNT-IS-based devices showed significant biological synapse functions and plasticity, indicating their potential for high-density storage and neuromorphic computing.

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Surface Engineered 2D Materials based Platforms for Advanced Technologies

Singh,

Kaushik

2024

Applied Surface Science Advances

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ZnO based RRAM performance enhancement by 100 MeV Ag9+ irradiation

Cited by 6 publications

References 53 publications

Sputter Deposited Mn‐doped ZnO Thin Film for Resistive Memory Applications

Sputter Deposited Mn‐doped ZnO Thin Film for Resistive Memory Applications

Synthesis of composite films for ZnO-based memristors with superior stability

Surface Engineered 2D Materials based Platforms for Advanced Technologies

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