Effect of swift heavy ion irradiation on structural and opto-electrical properties of bi-layer CdS–Bi2S3 thin films prepared by solution growth technique at room temperature

Shaikh, Shaheed U.; Siddiqui, Farha; Desale, Deepali J.; Ghule, Anil V.; Singh, Fouran; Kulriya, P.K.; Sharma, Ramphal

doi:10.1016/j.radphyschem.2014.07.017

Cited by 12 publications

(6 citation statements)

References 34 publications

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“…The largest obtained value of sensitivity is $578.6% for the 1 Â 10 13 ions per cm 2 irradiated sensor operating at 3 V, which is fairly high in the context of existing reports. 27 The available literature on UV-sensors suggests that nc-CdS thin lms are not much explored as a UV-sensitive material. However, a variety of ideas have been exploited to improve the performance of UV-sensors, e.g.…”

Section: Resultsmentioning

confidence: 99%

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Giant UV-sensitivity of ion beam irradiated nanocrystalline CdS thin films

et al. 2016

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Section: Resultsmentioning

confidence: 99%

“…Recently, Shaikh et al 27 studied the current voltage (I-V) characteristics of a 250 C annealed CdS-Bi 2 S 3 bi-layer thin lm and a lm irradiated by 120 MeV Au 9+ ions at a particular uence of 5 Â 10 12 ions per cm 2 under white light illumination. They obtained 28% photosensitivity for the irradiated lm.…”

Section: Introductionmentioning

confidence: 99%

Giant UV-sensitivity of ion beam irradiated nanocrystalline CdS thin films

et al. 2016

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“…The idea is that the Coulomb repulsive force must be larger than the mechanical resilience of irradiated solid objects. 5,27,28 Switching characteristics.-When a voltage variation of 0 → 1 → 0 → −1 → 0 V is supplied to the top electrode then the hysteresis curve is obtained with the resistance ratio of 10 2 as shown in Fig. 7a.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Switching in an Argon Annealed RRAM by Ion Irradiation

Kaushik¹,

Pandey²,

Singhal³

et al. 2022

ECS J. Solid State Sci. Technol.

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The present study describes the impact of ion irradiation on the switching behaviour of zinc oxide formed on indium tin oxide (ITO) substrates by radio-frequency sputtering. When annealed ZnO-ITO structures are bombarded with Ag+8 with a fluence of 1012 ions/cm2, the resistance ratio was found to be the order 103 at 1 V. In pristine samples (annealed in argon) the resistance ratio was found to be 102 at 1V. Variations in density defect generated by swift heavy ion irradiation gave birth to conducting filaments, which are the principal source of switching in ZnO, as opposed to changes in vacancies of oxygen at the interface.

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“…Moreover, if the electrostatic energy is greater than the chemical bond energy, the columbic repulsion will lead to track formation followed by effective atomic motion 40 – 42 . The ion track formation states the melting, sputtering and material resolidification via formation of new bonds which results into material modifications 43 . Thermal spike model is proposed in two steps, considering the irradiated material as electron gas and atomic lattice to describe the track formation in solid materials.…”

Section: Methodsmentioning

confidence: 99%

Phase transformation and enhanced blue photoluminescence of zirconium oxide poly-crystalline thin film induced by Ni ion beam irradiation

Chauhan

Gupta

Koratkar

et al. 2021

Sci Rep

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Swift heavy ions (SHI) irradiation of Nickel (Ni) beam with different ions fluence bring the modifications in the functional properties of radio frequency (RF) grown zirconium oxide (ZrO2) nanocrystalline thin films. X-ray diffraction analysis affirms the monoclinic to tetragonal phase transformation and diminishing of peak at higher fluence 1 × 1014 and 2 × 1014 ions/cm2 induced by electronic excitation caused by SHI. Zirconium oxide thin films exhibit the same thickness (195 nm) of virgin and irradiated samples and whereas the nanocrystalline thin films have the elemental composition in proper stoichiometry (1:2) as analyzed by rutherford backscattering spectroscopy (RBS). Photoluminescence measurements confirm the blue emission of virgin and irradiated sample recorded at excitation wavelength 270 to 310 nm. The intensity of obtained emission bands varies with fluence which is interpreted in terms of generation and annihilation of defect centers. The characteristic Ag and Bg Raman modes of monoclinic and tetragonal ZrO2 are obtained at different positions. Moreover, the nanocrystalline ZrO2 thin films exhibits the most prominent absorption phenomenon in the visible range and the irradiation cause significant decrease in band gap to 3.69 eV compare to the virgin ZrO2 sample (3.86 eV). XPS analysis indicates the shifting of the core levels Zr 3d and O 1s towards higher binding energy and spin—orbit splitting of different states. The findings in this research justify that the irradiated thin films can be a potential candidate for designing of new materials, intense radiation environments, nuclear reactors, nuclear waste systems, clean energy sources.

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Effect of swift heavy ion irradiation on structural and opto-electrical properties of bi-layer CdS–Bi2S3 thin films prepared by solution growth technique at room temperature

Cited by 12 publications

References 34 publications

Giant UV-sensitivity of ion beam irradiated nanocrystalline CdS thin films

Giant UV-sensitivity of ion beam irradiated nanocrystalline CdS thin films

Enhanced Switching in an Argon Annealed RRAM by Ion Irradiation

Phase transformation and enhanced blue photoluminescence of zirconium oxide poly-crystalline thin film induced by Ni ion beam irradiation

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