Effect of Ta underlayer on magnetic properties of FeMn/NiFe films

Chang, H. W.; Yuan, F.T.; Chiang, Min-Hsueh; Chan, Min-Yang; Liou, Sz‐Chian; Wei, Da‐Hua; Liao, S.W.; Pan, Pengfei; Wang, C.R.; Horng, Lance

doi:10.1016/j.surfcoat.2016.03.044

Cited by 12 publications

(4 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A constant magnetic field H dep = 1.5 kOe was applied during deposition in order to define an in-plane EB axis. Tantalum underlayer was used to induce a (111) FeMn preferential growth [24,25]. Magnetic characterization was performed at room temperature using a homemade alternating gradientfield magnetometer (AGFM).…”

Section: Methodsmentioning

confidence: 99%

Wireless power transfer exploring spin rectification and inverse spin Hall effects

Seeger¹,

Garcia²,

Dugato³

et al. 2018

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Devices based on spin rectification effects are of great interest for broadband communication applications, since they allow the rectification of radio frequency signals by simple ferromagnetic materials. The phenomenon is enhanced at ferromagnetic resonance condition, which may be attained when an external magnetic field is applied. The necessity of such field, however, hinders technological applications. Exploring spin rectification and spin Hall effects in exchange-biased samples, we were able to rectify radio frequency signals without an external applied magnetic field. Direct voltages of the order of μV were obtained when Ta/NiFe/FeMn/Ta thin films were exposed to microwaves in a shorted microstrip line for a relatively broad frequency range. Connecting the films to a resistive load, we estimated the fraction of the incident radio frequency power converted into usable dc power.

show abstract

Section: Methodsmentioning

confidence: 99%

Wireless power transfer exploring spin rectification and inverse spin Hall effects

Seeger¹,

Garcia²,

Dugato³

et al. 2018

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…An amazing feature of these structures is a relatively strong temperature dependence of exchange bias [64]. As an example, very high ratios of exchange bias to easy axis coercivity H B /H C ∼ 10 at room temperature have been reported for (111)-textured NiFe/IrMn [65] and NiFe/FeMn [66] exchange-biased bilayer systems.…”

Section: Introductionmentioning

confidence: 99%

Thermal hysteresis of magnetization in NiFe/IrMn exchange-biased ferromagnet

Таланцев¹,

Bakhmetiev²,

Моргунов³

2022

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Magnetization reversal in NiFe/IrMn exchange-biased thin films was investigated under thermal cycling in an external magnetic field, applied opposite to the direction of the exchange bias field. Thermal hysteresis of magnetization accompanied by changes in magnetization polarity was observed in the applied field close to the exchange bias value. This effect appears when thermally induced variations of the exchange bias exceed the corresponding variations in coercivity. The amplitude of magnetization reversal in NiFe/IrMn structures exceeds ~ 100 times the corresponding amplitude in spin-crossover molecular compounds. The observed bistability of the magnetic state, revealed by thermal hysteresis, gradually disappears with an increase in the number of cooling-heating thermal cycles, that indicates an irreversible quenching of the interfacial magnetization configuration. This effect paves the way for the creation of a new class of switching devices with thermally assisted bistability in the ferromagnetic state.

show abstract

“…Since EB is an interface phenomenon, roughness, morphology, crystallinity, thickness, and grain size of both AF and FM layer are highly sensitive to EB field (H E ), the magnetic field strength where the center of the M-H loop of a FM layer adjacent to an AF layer is shifted. [16][17][18][19] Therefore, microstructure and interface control is essential to optimize H E . Of all studied exchange bias system, underlayering has been reported effective on improving both interfacial property and crystallinity of AF and FM layers.…”

Section: Introductionmentioning

confidence: 99%

“…Of all studied exchange bias system, underlayering has been reported effective on improving both interfacial property and crystallinity of AF and FM layers. [16][17][18][19] In this work, Ta, reported effective to produce smooth interface with improved crystallinity, 19 is adopted as an underlayer, and the effect of post thermal process on ordering phase transformation, microstructure, and EB field of Co/MnPt (MnPt at bottom of bilayer) and MnPt/Co (MnPt at top of the bilayer) bilayers on Ta underlayer are studied. Large H E in the range of 465-560 Oe are attained in two above series films through proper thermal process of post annealing and cooling in external magnetic field.…”

Section: Introductionmentioning

confidence: 99%

Comparison on the structure and exchange bias in Co/MnPt and MnPt/Co polycrystalline films on glass substrates

et al. 2019

Self Cite

View full text Add to dashboard Cite

Structure and magnetic properties of sputter-prepared Co(5 nm)/MnPt(20 nm) and MnPt/Co polycrystalline films with various annealing temperatures (T) have been compared. XRD and TEM analysis show that MnPt is more compressive in film plane for Co/MnPt than MnPt/Co at as-deposited state. Large H E of 464-560 Oe are attained in two series films through proper thermal process of post annealing and cooling in external magnetic field. The increase of H E with T is mainly dominated by the ordering degree of MnPt layer and the roughness of the interface. As compared to MnPt/Co film (T = 250 ○ C), Co/MnPt film with more compressive in film plane exhibits L1 0-ordering, the onset of stress release, and the optimized H E at lower T = 200 ○ C. Higher H E for MnPt/Co film at T = 250 ○ C (560 Oe) than Co/MnPt film T = 200 ○ C (464 Oe) might be related to grain growth for L1 0 phase. Nevertheless, higher annealing temperature leads to the interdiffusion, the roughened surface and therefore the decrease of H E and Hc. This study provides useful information to fabricate exchange-bias system with L1 0-MnPt as an antiferromagnetic layer.

show abstract

Effect of Ta underlayer on magnetic properties of FeMn/NiFe films

Cited by 12 publications

References 13 publications

Wireless power transfer exploring spin rectification and inverse spin Hall effects

Wireless power transfer exploring spin rectification and inverse spin Hall effects

Thermal hysteresis of magnetization in NiFe/IrMn exchange-biased ferromagnet

Comparison on the structure and exchange bias in Co/MnPt and MnPt/Co polycrystalline films on glass substrates

Contact Info

Product

Resources

About