Effect of TCO/<i>μ</i>c-Si:H Interface Modification on Hydrogenated Microcrystalline Silicon Thin-Film Solar Cells

Liang, Sheng-Fu; Hsu, Chin-Wei; Tsai, C. C.

doi:10.1155/2013/756084

Cited by 5 publications

(4 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The FG treatment for Si-based device is widely used [9,19,21], and the FG annealing effect and on performance of the MOS-based device are discussed in previous studies [22,26,31].…”

Section: Resultsmentioning

confidence: 99%

Carrier-selective p- and n-contacts for efficient and stable photocatalytic water reduction

et al. 2017

View full text Add to dashboard Cite

The successful realization of carrier-selective contacts for crystalline silicon (c-Si) based device for photocatalytic hydrogen production has been demonstrated. The proposed TiO 2 protected carrier-selective contacts resemble a metal-oxide-semiconductor configuration, including a highly-doped nanocrystalline silicon (nc-Si) and a tunnel oxide, thereby form a heterostructure with the c-Si substrate. By substituting conventional pn +-junction Si by c-Si/SiO X /nc-Si structure for both front and back contacts we demonstrate a 16% increase in photovoltage (an open circuit voltage of 584 mV under AM 1.5G conditions). TiO 2 protected carrier-selective photoelectrodes showed excellent long-term durability in acidic aqueous solution having stable photocurrent output for more than 40 days, implying that the proposed carrier-selective contact is a promising configuration to substitute for the conventional pnjunction based c-Si photocathodes. *Manuscript (revised) Click here to view linked References

show abstract

“…The FG treatment for Si-based device is widely used [9,19,21], and the FG annealing effect and on performance of the MOS-based device are discussed in previous studies [22,26,31].…”

Section: Resultsmentioning

confidence: 99%

Carrier-selective p- and n-contacts for efficient and stable photocatalytic water reduction

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Nevertheless, it is hard for AZO to form self-textured surface and it has to use acids etching to acquire rough crater-like morphological characteristics. On the other hand, AZO loses its excel-lent electrical conductivity when placed in an air atmosphere of over 350°C [8,14].…”

Section: Introductionmentioning

confidence: 99%

Anti-reductive properties of AZO/FTO bilayered transparent conducting films

Gao

Wang

et al. 2018

Surface Engineering

View full text Add to dashboard Cite

Aluminium-doped zinc oxide (AZO)/fluorine-doped tin dioxide (FTO) double-layered transparent conducting films were manufactured on quartz glass substrates by spray pyrolysis. Like top films, AZO has marvellous reduction-resistant properties during a-Si:H deposition. However, as thin films with features of self-textured surfaces, SnO 2 :F (FTO) provides high light scattering for front electrode in photovoltaic devices. The distribution of elements in surface and interface has been analysed by glow discharge spectrometer. The anti-reductive behaviour in ambient hydrogen plasma condition was studied and the results showed that hydrogen ions are dispersed in the AZO layer but not diffused to the FTO layer, thus avoiding the reduction of SnO 2 to SnO or Sn during hydrogen plasma bombardment. Besides, this phenomenon also indicated that the coating of the AZO layer on FTO electrode can increase the resistance of FTO to hydrogen. AZO film protects FTO from reduction, and the resistivity to hydrogen plasma of AZO/FTO bilayer films has been improved.

show abstract

“…Transparent conductive oxide is often exposed to hydrogen-contained plasma during fabrication of thin-film silicon solar cells. The thin-film silicon solar cells are usually prepared by exposing a TCO substrate to strongly hydrogen-diluted silane plasma [ 1 ]. Replacing ITO is needed since indium in ITO is rare, toxic, and easily reduced in the environment of hydrogen plasma [ 2 , 3 ].…”

Section: Introductionmentioning

confidence: 99%

Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Chang

2014

Nanoscale Res Lett

View full text Add to dashboard Cite

Gallium and aluminum co-doped zinc oxide (GAZO) films were produced by magnetron sputtering. The GAZO films were post-annealed in either vacuum or hydrogen microwave plasma. Vacuum- and hydrogen microwave plasma-annealed GAZO films show different surface morphologies and lattice structures. The surface roughness and the spacing between adjacent (002) planes decrease; grain growth occurs for the GAZO films after vacuum annealing. The surface roughness increases and nanocrystals are grown for the GAZO films after hydrogen microwave plasma annealing. Both vacuum and hydrogen microwave plasma annealing can improve the electrical and optical properties of GAZO films. Hydrogen microwave plasma annealing improves more than vacuum annealing does for GAZO films. An electrical resistivity of 4.7 × 10−4 Ω-cm and average optical transmittance in the visible range from 400 to 800 nm of 95% can be obtained for the GAZO films after hydrogen microwave plasma annealing. Hybrid organic photovoltaic (OPV) devices were fabricated on the as-deposited, vacuum-annealed, and hydrogen microwave plasma-annealed GAZO-coated glass substrates. The active layer consisted of blended poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) in the OPV devices. The power conversion efficiency of the OPV devices is 1.22% for the hydrogen microwave plasma-annealed GAZO films, which is nearly two times higher compared with that for the as-deposited GAZO films.

show abstract

Effect of TCO/μc-Si:H Interface Modification on Hydrogenated Microcrystalline Silicon Thin-Film Solar Cells

Cited by 5 publications

References 17 publications

Carrier-selective p- and n-contacts for efficient and stable photocatalytic water reduction

Carrier-selective p- and n-contacts for efficient and stable photocatalytic water reduction

Anti-reductive properties of AZO/FTO bilayered transparent conducting films

Post-annealed gallium and aluminum co-doped zinc oxide films applied in organic photovoltaic devices

Contact Info

Product

Resources

About