Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Lo, Chien-Fong; Xi, Yuyin; Liu, Lu; Pearton, S. J.; Doré, Sylvain; Hsu, Chien-Hsing; Dabiran, A. M.; Chow, P. P.; Ren, F.

doi:10.1016/j.snb.2012.10.051

Cited by 21 publications

(18 citation statements)

References 26 publications

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“…Once again, the high surface area of nanowires provides an ideal approach for enzymatic detection of biochemically important substances [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30].…”

Section: Discussionmentioning

confidence: 99%

“…Specific semiconductor materials including III-nitrides such as GaN [12][13] and InN [14][15][16], metal oxides including ZnO and SnO2 [17][18], and high-temperature materials such as SiC [19] have seen the greatest interest for chemical gas sensing applications, chiefly for the detection of H2, O2, NH3 and ethanol. There is also interest in applying these to biomarker detection [21][22][23][24][25][26][27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

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Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors

Pearton

Ren

2013

Nanomaterials and Nanotechnology

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Wide bandgap semiconductor ZnO, GaN and InN nanowires have displayed the ability to detect many types of gases and biological and chemical species of interest. In this review, we give some recent examples of using these nanowires for applications in pH sensing, glucose detection and hydrogen detection at ppm levels. The wide bandgap materials offer advantages in terms of sensing because of their tolerance to high temperatures, environmental stability and the fact that they are usually piezoelectric. They are also readily integrated with wireless communication circuitry for data transmission.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors

Pearton

Ren

2013

Nanomaterials and Nanotechnology

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“…Several AlGaN/GaN-based gas sensors have been reported, including NO, NO 2 , NH 3 , Cl 2 , CO, CO 2 and CH 4 [ 156 , 157 , 158 ]. However, H 2 S sensing using wide bandgap semiconductors like GaN have not been explored yet that much.…”

Section: Recent Advances In H 2 S Gas Detectionmentioning

confidence: 99%

Recent Advances in Electrochemical Sensors for Detecting Toxic Gases: NO2, SO2 and H2S

Khan

Rao

2019

Sensors

285

100

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Toxic gases, such as NOx, SOx, H2S and other S-containing gases, cause numerous harmful effects on human health even at very low gas concentrations. Reliable detection of various gases in low concentration is mandatory in the fields such as industrial plants, environmental monitoring, air quality assurance, automotive technologies and so on. In this paper, the recent advances in electrochemical sensors for toxic gas detections were reviewed and summarized with a focus on NO2, SO2 and H2S gas sensors. The recent progress of the detection of each of these toxic gases was categorized by the highly explored sensing materials over the past few decades. The important sensing performance parameters like sensitivity/response, response and recovery times at certain gas concentration and operating temperature for different sensor materials and structures have been summarized and tabulated to provide a thorough performance comparison. A novel metric, sensitivity per ppm/response time ratio has been calculated for each sensor in order to compare the overall sensing performance on the same reference. It is found that hybrid materials-based sensors exhibit the highest average ratio for NO2 gas sensing, whereas GaN and metal-oxide based sensors possess the highest ratio for SO2 and H2S gas sensing, respectively. Recently, significant research efforts have been made exploring new sensor materials, such as graphene and its derivatives, transition metal dichalcogenides (TMDs), GaN, metal-metal oxide nanostructures, solid electrolytes and organic materials to detect the above-mentioned toxic gases. In addition, the contemporary progress in SO2 gas sensors based on zeolite and paper and H2S gas sensors based on colorimetric and metal-organic framework (MOF) structures have also been reviewed. Finally, this work reviewed the recent first principle studies on the interaction between gas molecules and novel promising materials like arsenene, borophene, blue phosphorene, GeSe monolayer and germanene. The goal is to understand the surface interaction mechanism.

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“…Because the electrons are localized in one dimension, and they are only free to travel along the x-y direction, they are called a two-dimensional electron gas (2DEG). The carrier concentration and mobility in such 2DEGs can be several times higher than in the bulk material, which translates into fast switching devices (37). The 2DEG acts as the current channel in the HEMT device.…”

Section: High-electron-mobility Transistor Biosensorsmentioning

confidence: 99%

Electronic Biosensors Based on III-Nitride Semiconductors

Kirste

Rohrbaugh²,

Bryan³

et al. 2015

Annual Rev. Anal. Chem.

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We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

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Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Cited by 21 publications

References 26 publications

Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors

Wide Bandgap Semiconductor One-Dimensional Nanostructures for Applications in Nanoelectronics and Nanosensors

Recent Advances in Electrochemical Sensors for Detecting Toxic Gases: NO2, SO2 and H2S

Electronic Biosensors Based on III-Nitride Semiconductors

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