Effect of temperature on GaSb nanocell lattice fabrication by void formation and development utilizing a focused ion beam

Abstract

The effect of sample temperature on GaSb nanocell fabrication using a focused ion beam was investigated. Two-dimensional nanocell lattices with a cell interval of 100 nm were fabricated on GaSb at 135 K and 293 K. It was shown that the lattice develops slowly at 135 K with increasing ion dose, and that it does so quickly at 293 K, being disturbed by newly created secondary voids. These results were discussed using the migration parameters of point defects deduced from the recovery data of electron-irradiated GaSb by [Thommen, Phys. Rev. 161, 769 (1967)].

Fabrication of ordered nanostructures on the Ge surface using electron-beam lithography and ion beam irradiation

“…The second step is the bottom-up migration of ion beam-induced point defects. The fabrication of ordered nanostructures containing Ge, 39) GaSb, [40][41][42][43][44][45] and InSb [46][47][48][49][50] has been attempted. However, there are limits to structure miniaturization because the ion beam diameter is large.…”