Effect of temperature on growth of epitaxial layer on semi-insulating 4H-SiC substrate

Zhao, Siqi; Chen, Junhong; Yang, Shenglai; Yan, Guangwu; Shen, Zhenxi; Zhao, Wei; Wang, Lei; Liu, Xingfang; Sun, Guangyong; Zeng, Yiping

doi:10.1016/j.jcrysgro.2022.127008

Cited by 8 publications

(5 citation statements)

References 20 publications

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“…However, appropriate use of buffer layers acquiring load through the relaxation of mechanical stresses has helped improve the structural qualities of MQWs and SLs. While there remain a few intrinsic issues, which could constrain the design of opto-electronic device structures, solutions to these problems are not impossible and can be resolved by exploiting suitable experimental (e.g., growth, characterization [94][95][96][97][98][99][100][101][102][103][104][105][106][107]) and theoretical methods.…”

Section: Introductionmentioning

confidence: 99%

“…Although binary compounds are used in many technological applications, considerably less attention is paid to ternary alloys despite the successful growth of ultrathin epifilms. A variety of characterization techniques are also applied for analyzing/ monitoring their fundamental properties [94][95][96][97][98][99][100][101][102][103][104][105][106][107]. The classification of such methods includes reflection high-energy electron diffraction (RHEED) [94,95], Auger electron spectroscopy (AES) [96], He + Rutherford backscattering spectrometry (RBS) [97], atomic force microscopy (AFM) [98,99], high-resolution X-ray diffraction (HR-XRD) [100][101][102], transmission electron microscopy (XTEM) [103], photoluminescence (PL) [104], absorption, Fourier transform infrared (FTIR) spectroscopy [100][101][102], Raman scattering spectroscopy (RSS) [105][106][107] and spectroscopic ellipsometry (SE) techniques [107], etc.…”

Section: Introductionmentioning

confidence: 99%

“…A variety of characterization techniques are also applied for analyzing/ monitoring their fundamental properties [94][95][96][97][98][99][100][101][102][103][104][105][106][107]. The classification of such methods includes reflection high-energy electron diffraction (RHEED) [94,95], Auger electron spectroscopy (AES) [96], He + Rutherford backscattering spectrometry (RBS) [97], atomic force microscopy (AFM) [98,99], high-resolution X-ray diffraction (HR-XRD) [100][101][102], transmission electron microscopy (XTEM) [103], photoluminescence (PL) [104], absorption, Fourier transform infrared (FTIR) spectroscopy [100][101][102], Raman scattering spectroscopy (RSS) [105][106][107] and spectroscopic ellipsometry (SE) techniques [107], etc. It is to be noted that not only have these techniques validated their crystal structures but also helped in assessing the film thickness, strain, intrinsic electrical, and optical traits.…”

Section: Introductionmentioning

confidence: 99%

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Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Talwar

2024

Inorganics

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Novel zinc-blende (zb) group-IV binary XC and ternary XxY1−xC alloys (X, Y ≡ Si, Ge, and Sn) have recently gained scientific and technological interest as promising alternatives to silicon for high-temperature, high-power optoelectronics, gas sensing and photovoltaic applications. Despite numerous efforts made to simulate the structural, electronic, and dynamical properties of binary materials, no vibrational and/or thermodynamic studies exist for the ternary alloys. By adopting a realistic rigid-ion-model (RIM), we have reported methodical calculations to comprehend the lattice dynamics and thermodynamic traits of both binary and ternary compounds. With appropriate interatomic force constants (IFCs) of XC at ambient pressure, the study of phonon dispersions offered positive values of acoustic modes in the entire Brillouin zone (BZ)—implying their structural stability. For XxY1−xC, we have used Green’s function (GF) theory in the virtual crystal approximation to calculate composition x, dependent and one phonon density of states . With no additional IFCs, the RIM GF approach has provided complete in the crystallographic directions for both optical and acoustical phonon branches. In quasi-harmonic approximation, the theory predicted thermodynamic characteristics (e.g., Debye temperature ΘD(T) and specific heat Cv(T)) for XxY1−xC alloys. Unlike SiC, the GeC, SnC and GexSn1−xC materials have exhibited weak IFCs with low [high] values of ΘD(T) [Cv(T)]. We feel that the latter materials may not be suitable as fuel-cladding layers in nuclear reactors and high-temperature applications. However, the XC and XxY1−xC can still be used to design multi-quantum well or superlattice-based micro-/nano devices for different strategic and civilian application needs.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Talwar

2024

Inorganics

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“…With the gradual advancement of silicon carbide (SiC) chemical vapor deposition (CVD) technology, the SiC growth process has approached maturity, and the primary obstacle to producing SiC semiconductor epitaxial wafers lie in the presence of epitaxial defects. These defects pose significant challenges for high-voltage and high-power SiC power electronic devices [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. The origins of these defects are often related to many factors, such as substrate quality, growth temperature and cavity structure, and the crystal structure of these defects is usually complicated [ 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 ].…”

Section: Introductionmentioning

confidence: 99%

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Pei,

Yuan,

et al. 2024

Micromachines

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To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, including the ratio of carbon to silicon, growth time, application of a buffer layer, hydrogen etching and other process parameters. Through systematic experimental verification and data analysis, it was verified that when the carbon–silicon ratio was accurately controlled at 0.72, the density of defects in the epitaxial wafer was the lowest, and its surface flatness showed the best state. In addition, it was found that the growth of the buffer layer under specific conditions could effectively reduce defects, especially surface morphology defects. This provides a new idea and method for improving the surface quality of epitaxial wafers. At the same time, we also studied the influence of hydrogen etching on the quality of epitaxial wafers. The experimental results show that proper hydrogen etching can optimize surface quality, but excessive etching may lead to the exposure of substrate defects. Therefore, it is necessary to carefully control the conditions of hydrogen etching in practical applications to avoid adverse effects. These findings have important guiding significance for optimizing the quality of epitaxial wafers.

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“…The 4H silicon carbide (4H-SiC) is one of the leading high-performance semiconductor materials, which has the advantages of a wide band gap, high thermal conductivity, and high saturation drift velocity [1,2]. The 4H-SiC is a typical polytype semiconductor, which is one of the ideal materials for preparing high-temperature, high-frequency, and high-power electronic devices [3][4][5]. Currently, silicon-based power devices are reaching physical limits in their ability to achieve low on-state voltage drop and switch at high frequencies.…”

Section: Introductionmentioning

confidence: 99%

The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers

et al. 2023

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In this study, a 4H-SiC homoepitaxial layer was grown on a 150 mm 4° off-axis substrate using a horizontal hot-wall CVD reactor. The research aimed to investigate the impact of varying the C/Si ratio and temperature while also changing the N2 flow rate and N2 flow ratio on the growth rate (thickness), doping, surface roughness, and uniformity of the large-size 4H-SiC epitaxial layer. The results indicate that the growth rate and thickness uniformity of the film increases with an increase in the C/Si ratio. Additionally, adjusting the N2 flow rate in a timely manner based on the change in the C/Si ratio is crucial to achieving the best epitaxial layer doping concentration and uniformity. The study found that, as the temperature increases, the film thickness and thickness uniformity also increase. The maximum thickness recorded was 6.2 μm, while the minimum thickness uniformity was 1.44% at 1570 °C. Additionally, the surface roughness reached its lowest point at 0.81 nm at 1570 °C. To compensate for the difference in thickness and doping concentration caused by temperature distribution and uneven airflow, the N2 flow ratio was altered. In particular, at a growth temperature of 1570 °C, a N2 flow ratio of 1.78 can improve the uniformity of doping by 4.12%.

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Effect of temperature on growth of epitaxial layer on semi-insulating 4H-SiC substrate

Cited by 8 publications

References 20 publications

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Composition-Dependent Phonon and Thermodynamic Characteristics of C-Based XxY1−xC (X, Y ≡ Si, Ge, Sn) Alloys

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

The Optimizing Effect of Nitrogen Flow Ratio on the Homoepitaxial Growth of 4H-SiC Layers

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