Effect of temperature on performance of nanostructured silicon thin-film solar cells

Da, Yun; Xuan, Yi

doi:10.1016/j.solener.2015.02.025

Cited by 13 publications

(7 citation statements)

References 33 publications

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“…Formula ( 5) is a time-dependent equation for the heat energy of a semiconductor crystal. Let us calculate the amount of heat in a metal nanoparticle by using formula (6). If temperature is taken as a timeindependent parameter ( ) 0…”

Section: Theorymentioning

confidence: 99%

“…But the decrease in the output power of a nanoscale silicon-based solar cell to 79.17 % in the temperature range from 280 to 340 K was calculated using Silvaco TCAD [5]. The efficiency of a nanostructured and nanoporous silicon-based solar cell decreased by 52.5 % when the temperature changed from 300 to 400 K, which was calculated using time-dependent functions and numerical methods [6].…”

Section: Introductionmentioning

confidence: 99%

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Study of the Temperature Coefficient of the Main Photoelectric Parameters of Silicon Solar Cells with Various Nanoparticles

Gulomov¹,

Алиев²

2021

J. Nano- Electron. Phys.

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It is significant to improve the photoelectric parameters of thin-film silicon-based solar cells. There are some methods to enhance the optical and electrical properties of thin-film silicon-based solar cells. One of them is to insert various metal nanoparticles into a thin-film solar cell. Nanoparticles have an effect on the photoelectric parameters, also on their temperature coefficients. In this work, the effect of Au, Ag, Pt, Ti, Co, Al, Cu nanoparticles on the temperature coefficient of the photoelectric parameters of a thin film silicon-based solar cell was studied. The calculations were performed for temperatures ranging from 250 to 350 K. In this research, it was found that the open-circuit voltage of a solar cell with Pt and Ti nanoparticles changes by 0.4 % when the temperature changes by 1 K. Besides, it was revealed that the short-circuit current of a solar cell with Ag nanoparticles has the greatest effect on the temperature coefficient, that is 6.3 times.

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Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study of the Temperature Coefficient of the Main Photoelectric Parameters of Silicon Solar Cells with Various Nanoparticles

Gulomov¹,

Алиев²

2021

J. Nano- Electron. Phys.

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“…Second reason, the refractive index of a semiconductor decreases with the increase in the energy band gap according to various empirical rules. As shown in (5) the increase in the energy band gap of quantum dot material than the value of bulk material decreases the infinity dielectric constant. The refractive index in quantum dot thin films reduced so it is a great advantage in solar cells application where the reflection also decreased so absorption increases [31]- [34].…”

Section: Design Modelmentioning

confidence: 90%

“…𝑣 𝑓𝑏 is the fermi velocity of semiconductor layer material. 𝜀 𝑠ℎ𝑒𝑙𝑙∞𝑄𝐷 is the infinity dielectric constant of QD semiconductor shell layer material which calculated as in (5).…”

Section: Design Modelmentioning

confidence: 99%

“…Table 1 and Table 2 show the main parameters of usage materials and parameters of HJQD thin film models based on QD window layer and metallic-semiconductor core/shell absorber layer; the results have been obtained using QD window layer radius 1 nm and QD core/shell with QD shell layer material radius 3nm and under AM1. 5…”

Section: Selected Materials and Parameters Of Modelsmentioning

confidence: 99%

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Ultra-optical characterization of thin film solar cells materials using core/shell absorber layer

Thabet

Abdelhady

Mobarak

2022

IJECE

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<span>This paper investigates on new design of heterojunction quantum dot (HJQD) photovoltaics solar cells CdS/PbS that is based on quantum dot metallics PbS core/shell absorber layer and quantum dot window layer. It has been enhanced the performance of traditional HJQD thin film solar cells model based on quantum dot absorber layer and bulk window layer. The new design has been used sub-micro absorber layer thickness to achieve high efficiency with material reduction, low cost, and time. Metallics-semiconductor core/shell absorber layer has been succeeded for improving the optical characteristics such energy band gap and the absorption of absorber layer materials, also enhancing the performance of HJQD ITO/CdS/QDPbS/Au, sub micro thin film solar cells. Finally, it has been formulating the quantum dot (QD) metallic cores concentration effect on the absorption, energy band gap and electron-hole generation rate in absorber layers, external quantum efficiency, energy conversion efficiency, fill factor of the innovative design of HJQD cells.</span>

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A Comprehensive Study on a Stand-Alone Germanium (Ge) Solar Cell

Baran

Çat

Sertel

et al. 2019

Journal of Elec Materi

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Effect of temperature on performance of nanostructured silicon thin-film solar cells

Cited by 13 publications

References 33 publications

Study of the Temperature Coefficient of the Main Photoelectric Parameters of Silicon Solar Cells with Various Nanoparticles

Study of the Temperature Coefficient of the Main Photoelectric Parameters of Silicon Solar Cells with Various Nanoparticles

Ultra-optical characterization of thin film solar cells materials using core/shell absorber layer

A Comprehensive Study on a Stand-Alone Germanium (Ge) Solar Cell

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