Effect of temperature on selenization process of metallic Cu–In alloy precursors

Mechanism of forming (2 2 0/2 0 4)-oriented CuInSe2 film on Al:ZnO substrate using a two-step selenization process

“…As Fig. 4 also indicates, the CIS grain formation during the extended selenization favors the (1 1 2) preferred orientation at 400 1C, and similar results were reported in earlier works [14,15]. Even the CIS (2 2 0/2 0 4)-preferred film will be transformed into a (1 1 2)-preferred one with prolonged selenization [24], and these results suggest that a short duration of 400 1C selenization is essential to avoid the growth of a (1 1 2)-preferred CIS film.…”

“…Only a strong (0 0 2) diffraction peak of AZO film is observed, and the co-sputtered Cu/In precursor layer is an amorphous film. The precursor film is different from most reported in the literature, in which the co-sputtered precursor has Cu-In binary phases, such as Cu 11 In 9 [12][13][14][15]. In this study, the as-deposited Cu-In precursor film has rounded grains 300-500 nm in diameter and with a rough surface, as the inset picture shown.…”

Synthesis of CuInSe2 films via selenizing the Cu–In alloy-containing nanopowders

“…9), monophasic chalcopyrite CuInSe 2 phase was obtained throughout the thin film without impurity phases remaining near the substrate. It is inferred that at elevated temperatures the diffusion of Se vapor within the thin film is enhanced correspondingly [29,30], thereby facilitating the formation of the single-phase CuInSe 2 thin film. A monophasic CuInSe 2 thin film was successfully prepared via selenizing the obtained nanopowders.…”

A study on composition, structure and optical properties of copper-poor CIGS thin film deposited by sequential sputtering of CuGa/In and In/(CuGa+In) precursors

“…However, in spite of the high efficiency of 16.2% achieved by sputtering/selenization process [8], the formation mechanism of even relatively simple Cu-In-Ga-Se compound during the sputtering and selenization process is not yet completely understood. To obtain composition uniformity of the CIGS layer, stacked metal of In/CuGa, CuGa/In/CuGa, In/CuGa/In precursors have been investigated to avoid the formation of low temperature Ga-In eutectic alloy with liquid feature [10][11][12][13][14]. Hsu et al reported, a single CuInGa precursor layer sandwiched between a thin CuGa and an In layers precursor structure for improving the open circuit voltage (V oc ) and short current density (J sc ) of a CIGS solar cell [14].…”