Mechanism of forming (2 2 0/2 0 4)-oriented CuInSe2 film on Al:ZnO substrate using a two-step selenization process

A study of microstructure and optical absorption properties of Cu(In,Ga,Al)Se2 powders

“…These angle values are all different from 60 , which is the sphalerite unique angle. Therefore, the above results indicate that, when the copper and indium atoms were arranged in an orderly fashion, the microstructure produced lattice distortion, chalcopyrite was then formed, which is consistent with a previous report .…”

“…Moreover, the corresponding technique made very rapid progress, which has led to the efficiency of lab‐scale devices reaching about 20% , and it was reported that the efficiency of large area devices with 30 × 30 cm 2 was in the order of 17% . As is well known, the high efficiency of CIGS solar cells is attributed to the strong photon absorption of CIGS materials which has good radiation resistance, excellent longevity and adjustable band gaps . Among these unique natures and characteristics, CIGS materials have the advantage of tuning a lower band gap from 1.04 eV (Ga – free) to 1.67 eV (In ‐ free) by adjusting the [Ga/(In + Ga)] ratio ; and the optimal absorption band gap for the solar spectrum is 1.37 eV, which is estimated by theoretical calculations .…”

Synthesis of CuInSe2 monodisperse nanoparticles and the nanorings shape evolution via a green solution reaction route

“…More interest has been focused on chalcopyrite semiconductors as a candidate for solar cell materials. As one of the most important ternary compound, CuInSe 2 (CIS) has advantageous applications in thin-film solar cells, because of its high absorption coefficient, optimal band gap energy, which is close to solar energy, good radiation stability, low-cost production, and low toxicity [10,11]. Furthermore, CIS-based solar cells have demonstrated higher solar energy conversion than either CdTe or a-Si based devices [12].…”

Double-graded bandgap in Cu(In,Ga)Se2 thin film solar cells by low toxicity selenization process

“…4 The selenization process to fabricate CIGSe thin film exhibits elemental inter-diffusion issues in longitudinal phase inhomogeneity and low bandgap near the surface, hence, degrading its electrical properties. [6][7][8][9] Sulfurization treatment is a method that alloys sulfur into CIGSe thin films to increase the energy bandgap by using highly toxic H 2 Se/ H 2 S gases. 10,11 Nevertheless, to investigate an environmentfriendly alternative, this study addresses a low-toxic selenization process with post gallium diffusion (PGD) treatment by using selenium vapor source to fabricate CIGSe absorbers.…”