Double-graded bandgap in Cu(In,Ga)Se2 thin film solar cells by low toxicity selenization process

Wang, Yi‐Chih; Shieh, Han–Ping D.

doi:10.1063/1.4893713

Cited by 11 publications

(7 citation statements)

References 23 publications

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“…This process allows modulation of the compositional profiles (e.g., the Ga/In ratio) of the absorber layers along the film thickness. The effects of such nonuniform composition profiles and the resulting band gap energy ( E g ) gradient on the solar cell performance of thin-film solar cells have been known to make significant contributions to the highly enhanced solar cell performance, which has prompted extensive works in both experimental and simulation studies. − …”

Section: Introductionmentioning

confidence: 99%

Chalcogenization-Derived Band Gap Grading in Solution-Processed CuIn_xGa_1–x(Se,S)₂ Thin-Film Solar Cells

Park¹,

Jeon²,

Cho³

et al. 2015

ACS Appl. Mater. Interfaces

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Significant enhancement of solution-processed CuIn(x)Ga(1-x)(Se,S)2 (CIGSSe) thin-film solar cell performance was achieved by inducing a band gap gradient in the film thickness, which was triggered by the chalcogenization process. Specifically, after the preparation of an amorphous mixed oxide film of Cu, In, and Ga by a simple paste coating method chalcogenization under Se vapor, along with the flow of dilute H2S gas, resulted in the formation of CIGSSe films with graded composition distribution: S-rich top, In- and Se-rich middle, and Ga- and S-rich bottom. This uneven compositional distribution was confirmed to lead to a band gap gradient in the film, which may also be responsible for enhancement in the open circuit voltage and reduction in photocurrent loss, thus increasing the overall efficiency. The highest power conversion efficiency of 11.7% was achieved with J(sc) of 28.3 mA/cm(2), V(oc) of 601 mV, and FF of 68.6%.

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Section: Introductionmentioning

confidence: 99%

Chalcogenization-Derived Band Gap Grading in Solution-Processed CuIn_xGa_1–x(Se,S)₂ Thin-Film Solar Cells

Park¹,

Jeon²,

Cho³

et al. 2015

ACS Appl. Mater. Interfaces

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“…With mass production of modules having efficiencies ranging from 11.8% to 13.8%, Solar Frontier was able to achieve an annual production of~1 GW and over 3 GW of shipments worldwide in 2015 [139,140]. The statement made on surpassing the performance of c-Si solar cells is according to the cadmium-and lead-free CIS module (SF 150-170S Series) 7 International Journal of Photoenergy which provides an efficiency of 13.8% for a total area of 12,280 cm 2 [140,141]. The current technology offered by Solar Frontier with high energy yield leads to a shorter energy payback time which fulfil the requirement to be competitive towards c-Si solar cells by producing highquality module at lower cost.…”

Section: Scale-up Challenges/issues Of Cigs Thin Film Modulesmentioning

confidence: 99%

“…The advantages of CIGS-based solar cells over CIS-based solar cells are as follows: (i) the bandgap can be tuned by adjusting the Ga/In ratio to match the solar spectrum. If all indium (In) is replaced by gallium (Ga), the CIGS bandgap increases from about 1.04 eV to 1.68 eV [7]. It has been stated that CIGS absorber layer can absorb most parts of the solar spectrum with a thickness of 1 μm [1].…”

Section: Introductionmentioning

confidence: 99%

Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

Ong

Ramasamy

Maniscalco

et al. 2018

International Journal of Photoenergy

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Copper Indium Gallium Selenide- (CIGS-) based solar cells have become one of the most promising candidates among the thin film technologies for solar power generation. The current record efficiency of CIGS has reached 22.6% which is comparable to the crystalline silicon- (c-Si-) based solar cells. However, material properties and efficiency on small area devices are crucial aspects to be considered before manufacturing into large scale. The process for each layer of the CIGS solar cells, including the type of substrate used and deposition condition for the molybdenum back contact, will give a direct impact to the efficiency of the fabricated device. In this paper, brief introduction on the production, efficiency, etc. of a-Si, CdTe, and CIGS thin film solar cells and c-Si solar cells are first reviewed, followed by the recent progress of substrates. Different deposition techniques’ influence on the properties of molybdenum back contact for CIGS are discussed. Then, the formation and thickness influence factors of the interfacial MoSe2 layer are reviewed; its role in forming ohmic contact, possible detrimental effects, and characterization of the barrier layers are specified. Scale-up challenges/issues of CIGS module production are also presented to give an insight into commercializing CIGS solar cells.

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“…Quaternary semiconductors, especially Cu In Ge Se (CIGS), are attracting great attention as absorber materials [4]. The variable band gap is what makes CIGS a special characteristic, which can be optimized by varying the Ga/(In + Ga) ratio to obtain different band gaps for different depths in the CIGS film [5].…”

Section: Introductionmentioning

confidence: 99%

Study of the Effect of Absorber Layer Thickness of CIGS Solar Cells with Different Band Gap Using SILVACO TCAD

Laoufi¹,

Benmoussa²,

Kadi³

et al. 2021

J. Nano- Electron. Phys.

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In this paper, we have simulated a copper indium gallium selenide (CIGS) thin-film solar cell using a physically based two-dimensional device simulator SILVACO Atlas. The simulation of electrical characteristics and quantum efficiency was under AM1.5 illumination and a temperature of 300 K. In this work, we changed the band gap of CuInxGa1 -xSe to optimize the efficiency of the solar cell. We obtained it by varying the absorber layer thickness with different mole fractions x that affects the efficiency of the solar cell. The simulation result shows that the maximum efficiency of 16.62 % was achieved with a band gap of 1.67 eV and a thickness of 3 µm, a short-circuit current density of 29.293 mA/cm 2 , an open-circuit voltage of 1.29 V, and a fill factor of 87.79 %. The obtained results show that the proposed design can be considered as a potential candidate for high performance photovoltaic applications.

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Double-graded bandgap in Cu(In,Ga)Se2 thin film solar cells by low toxicity selenization process

Cited by 11 publications

References 23 publications

Chalcogenization-Derived Band Gap Grading in Solution-Processed CuIn_xGa_1–x(Se,S)₂ Thin-Film Solar Cells

Chalcogenization-Derived Band Gap Grading in Solution-Processed CuIn_xGa_1–x(Se,S)₂ Thin-Film Solar Cells

Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

Study of the Effect of Absorber Layer Thickness of CIGS Solar Cells with Different Band Gap Using SILVACO TCAD

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Double-graded bandgap in Cu(In,Ga)Se2 thin film solar cells by low toxicity selenization process

Cited by 11 publications

References 23 publications

Chalcogenization-Derived Band Gap Grading in Solution-Processed CuInxGa1–x(Se,S)2 Thin-Film Solar Cells

Chalcogenization-Derived Band Gap Grading in Solution-Processed CuInxGa1–x(Se,S)2 Thin-Film Solar Cells

Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

Study of the Effect of Absorber Layer Thickness of CIGS Solar Cells with Different Band Gap Using SILVACO TCAD

Contact Info

Product

Resources

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Chalcogenization-Derived Band Gap Grading in Solution-Processed CuIn_xGa_1–x(Se,S)₂ Thin-Film Solar Cells

Chalcogenization-Derived Band Gap Grading in Solution-Processed CuIn_xGa_1–x(Se,S)₂ Thin-Film Solar Cells