1998
DOI: 10.1116/1.581125
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Effect of temperature on Ti and TiN films deposited on a BN substrate

Abstract: Optimization of hardness by the control of microwave power in TiN thin film deposited by electron cyclotron resonance assisted sputtering in a nitrogen plasma J. Vac. Sci. Technol. A 17, 2535 (1999); 10.1116/1.581993 X-ray photoelectron spectroscopy study of the chemical interaction between BN and Ti/TiN J. Vac. Sci. Technol. A 15, 505 (1997); 10.1116/1.580881 Combined x-ray photoelectron/Auger electron spectroscopy/glancing angle x-ray diffraction/extended x-ray absorption fine structure investigation of TiB … Show more

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Cited by 9 publications
(5 citation statements)
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“…[16] and the conclusions were similar to that based on the XPS investigation [15]. The temperature of 1000 • C was too low to form the TiB 2 phase in both Ti and TiN coatings.…”
Section: Xanes Resultssupporting
confidence: 70%
See 2 more Smart Citations
“…[16] and the conclusions were similar to that based on the XPS investigation [15]. The temperature of 1000 • C was too low to form the TiB 2 phase in both Ti and TiN coatings.…”
Section: Xanes Resultssupporting
confidence: 70%
“…In the layered cBN-Ti samples, the formation of TiB 2 phase has very significant influence on the hardness. After the annealing at 1300 or 1400 • C, the XPS [15] and XANES [12,16] detected formation of predominant TiB 2 phase, the hardness is higher than in pure TiB 2 but lower than in pure cBN (Fig. 7).…”
Section: Hardness Testmentioning
confidence: 91%
See 1 more Smart Citation
“…Dengan defenisi ini maka kekerasan berbanding lurus dengan modulus bulk-nya, B yang didefenisikan sebagai [2][3] Namun demikian, dalam praktek, pengukuran kekerasan ini sangat teknis sehingga menyebabkan banyak data kekerasan dari material yang sama dilaporkan secara berbeda-beda dari literatur ke literatur. Sebagai contoh, kekerasan TiN dilaporkan sangat bervariasi tergantung metode pembuatannya dari yang paling rendah 2-3 Gpa [4], sampai suatu harga yang sesuai dengan TiN stoikometri antara 20 GPa [5][6] dan 25 GPa [7]. Untuk macam-macam teknik PVD (Physical Vapour Deposition) dilaporkan suatu nilai yang tidak realistis yaitu 35 GPa untuk plasma CVD (Chemical Vapour Deposition) [8] dan 70 -80 GPa untuk teknik reactive sputtering [9][10].…”
Section: Pendahuluanunclassified
“…Namun demikian, dalam praktek, pengukuran kekerasan ini sangat teknis sehingga menyebabkan banyak data kekerasan dari material yang sama dilaporkan secara berbeda-beda dari literatur ke literatur. Sebagai contoh, kekerasan TiN dilaporkan sangat bervariasi tergantung metode pembuatannya dari yang paling rendah 2-3 Gpa [4], sampai suatu harga yang sesuai dengan TiN stoikometri antara 20 GPa [5][6]…”
Section: Pendahuluanunclassified