2010
DOI: 10.1016/j.jallcom.2009.09.184
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Effect of temperature on various properties of photoelectrochemical cell

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Cited by 4 publications
(3 citation statements)
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“…For the PEC solar cell, the primary requirement for good solar energy conversion is that the photocathode or photoanode should have band gap close to the maximum in the visible spectrum of solar light, besides its high stability in the electrolyte [3]. In recent years, considerable interest has been shown in the synthesis and photoelectrochemical test of semiconductor thin films due to the high conversion efficiency and low production cost [4]. The study of PEC solar cells fabricated by polycrystalline thin films of II-VI chalcogenide compound is interesting because of their excellent optoelectronic properties [5,6].…”
Section: Introductionmentioning
confidence: 99%
“…For the PEC solar cell, the primary requirement for good solar energy conversion is that the photocathode or photoanode should have band gap close to the maximum in the visible spectrum of solar light, besides its high stability in the electrolyte [3]. In recent years, considerable interest has been shown in the synthesis and photoelectrochemical test of semiconductor thin films due to the high conversion efficiency and low production cost [4]. The study of PEC solar cells fabricated by polycrystalline thin films of II-VI chalcogenide compound is interesting because of their excellent optoelectronic properties [5,6].…”
Section: Introductionmentioning
confidence: 99%
“…Thin films of pure CdS by CBD with different capping agents have been deposited by Patil and Singh [13] for PEC cell application. Hankare et al [14,15] have deposited the thin films of pure ZnS by dip method and have studied the PEC properties. Innocenti et al [16] have deposited thin films of Cd x Zn (1−x) S (x = 0.3) on Ag(1 1 1) substrate by electrochemical atomic layer epitaxy (ECALE) and utilized for PEC cell application.…”
Section: Introductionmentioning
confidence: 99%
“…ZnS can be used for the fabrication of optoelectronic devices such as blue-light emitting diodes, electroluminescent devices, electro-optic modular, optical coating, n-indo layers for thin film heterojuncion solar cells, photo conductor, and photo voltaic devices [5][6][7][8]. It is used in beam splitting and band pass filters over the region between 400 and 1000 nm [9][10][11]. Because of its high refractive index (2.35), and a dielectric filter, it is used as reflector in the visible region [12].…”
Section: Introductionmentioning
confidence: 99%