Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures

Roy, Arijit; Tan, Cher Ming; Kumar, R.; Chen, Xian Tong

doi:10.1016/j.microrel.2005.07.042

Cited by 18 publications

(6 citation statements)

References 20 publications

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“…Cu interconnect process was developed by IBM in 1985. Because it is difficult to etch for Cu, the double embedded technology, namely DD process, which includes oxidization, doping, deposition, printing, sputtering, electroplating, chemical mechanical polish (CMP), annealing and so on [31]. Photolithography is to carve micro holes and grooves on silica after precipitation.…”

Section: Trend Of Interconnect Processmentioning

confidence: 99%

Review of the Global Trend of Interconnect Reliability for Integrated Circuit

Lin¹,

Wu²,

Jia³

2018

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Interconnect reliability has been regarded as a discipline that must be seriously taken into account from the early design phase of integrated circuit (IC). In order to study the status and trend of the interconnect reliability, a comprehensive review of the published literatures is carried out. This can depict the global trend of ICs' interconnect reliability and help the new entrants to understand the present situation of this area.

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Section: Trend Of Interconnect Processmentioning

confidence: 99%

Review of the Global Trend of Interconnect Reliability for Integrated Circuit

Lin¹,

Wu²,

Jia³

2018

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“…From the AFD distributions for different SFT (see Figure 4.7), one can notice that AFD decreases with decrease in the SFT. Thus reducing SFT, AFD that exists at the beginning of EM test in the metallization can be reduced [90,92]. Since the failure time is inversely proportional to AFD as described earlier, one expects a similar trend between t 50 and 1/AFD.…”

Section: Resultsmentioning

confidence: 79%

“…It is to be noted here that failure site depends on the SFT as well as on the EM test condition [90,92]. Notice that the AFD distributions (see Figure 4.7) predict that for SFT in the range 360 to 340°C and when EM test condition are T=300°C, j=1…”

Section: Resultsmentioning

confidence: 81%

“…Also, the stress value of the failure site A decreases with the decrease in the SFT, and the stress state at this failure site changes from tensile to compressive at about 323°C as shown in Figure 4.6 [90]. Thus failure site A is not expected for sample with SFT below 323°C when tested with the used test condition.…”

Section: Resultsmentioning

confidence: 93%

“…There are different ways to show that the interconnect failure time (t f ) is inversely proportional to AFD [50,26] Thus it is anticipated that by reducing the AFD, interconnect life-time can be improved. On the other hand, reduction in AFD can be obtained by reducing interconnect SFT [90].…”

Section: Relation Between Failure Time and Afdmentioning

confidence: 99%

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A study on electromigration by driving force approach for submicron copper interconnect

Roy¹

Self Cite

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Electromigration (EM) is one of the major reliability issues for metal interconnect in integrated circuits (ICs). The ever increasing complexity of interconnects requires more demanding reliability of each component. The prime interest of this work is to investigate the EM failure physics for submicron Cu interconnections based on driving force approach including the effect of surrounding materials. For EM in interconnect, there are various extrinsic weaknesses which are having significant impact on failure characteristics. One good example of extrinsic weakness is stress gradient which exists in the interconnect core material due to thermo-mechanical mismatch at typical EM test condition. From the very beginning of the EM history, the electron wind force (EWF) is believed to be the most responsible driving force for atom or vacancy migration, although it is well known that the surrounding materials and the interconnect processing history highly influence the failure mechanisms. Apart from the EWF, the other driving forces such as forces from stress gradient, temperature gradient, surface tension etc. are believed to be only modify the atomic flux (AF) and corresponding atomic flux divergence (AFD) created by EWF. It is the purpose of this study to verify that the above mentioned forces can act as potential driving force in EM. The obvious sources of AFDs are the non-uniform distributions of current density, temperature, and stress fields in the metallization. These non-uniformities arise due to the presence dissimilar materials surrounding the ATTENTION: The Singapore Copyright Act applies to the use of this document. Nanyang Technological University Library VII metallization and hence responsible for various extrinsic weakness against EM mass transport. In investigating the EM failure physics, the key reliability process parameters are identified to improve the EM reliability. In order to investigate the various driving forces and their effects on EM reliability for submicron interconnects, AFD based model is developed using finite element method. By introducing the above mentioned combined driving force approach and conducting EM experiments for submicron Cu interconnects, various EM characteristics are described. The model predicts that the stress free temperature (SFT) is one of the important process-related parameter that influences interconnect EM reliability. It is also predicted that by lowering the SFT, EM lifetime can be improved, which is verified by conducting EM experiments. In order to obtain critical void volume, resistance change profile etc., a dynamic EM model is described for submicron Cu dual damascene (DD) line-via test structure. The model predictions are found to agree well with experimental results. One of the EM reliability concern is the current crowding in line-via interconnects. The effect of current crowding is described in the light of width dependence and EM failure characteristics. A modified Black's equation is prescribed for line-via interconnects in the presence of current crow...

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Finite Element Method for Electromigration Study

Tan

Gan

et al. 2011

Springer Series in Reliability Engineering

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Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures

Cited by 18 publications

References 20 publications

Review of the Global Trend of Interconnect Reliability for Integrated Circuit

Review of the Global Trend of Interconnect Reliability for Integrated Circuit

A study on electromigration by driving force approach for submicron copper interconnect

Finite Element Method for Electromigration Study

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