Cr-doped SnO
2
nanostructures with a dopant concentration
ranging from 1 to 5% have been successfully prepared using low-temperature
modified solvothermal synthesis. The as-prepared nanoparticles showed
a rutile tetragonal structure with a rough undefined morphology having
no other elemental impurities. The particle shape and size, band gap,
and specific surface area of the samples were investigated by scanning
electron microscopy, transmission electron microscopy (TEM), high-resolution
TEM, UV–visible diffused reflectance spectroscopy, and Brunauer–Emmett–Teller
surface area studies. The optical band gap was found in the range
of 3.23–3.67 eV and the specific surface area was in the range
of 108–225 m
2
/g, which contributes to the significantly
enhanced photocatalytic and electrochemical performance. Photocatalytic
H
2
generation of as-prepared Cr-doped SnO
2
nanostructures
showed improved effect of the increasing dopant concentration with
narrowing of the band gap. Electrochemical water-splitting studies
also stressed upon the superiority of Cr-doped SnO
2
nanostructures
over pristine SnO
2
toward hydrogen evolution reaction and
oxygen evolution reaction responses.