Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots

Shernyakov, Yu. M.; Gordeev, N. Yu.; Payusov, A. S.; Serin, A. A.; Kornyshov, G. O.; Nadtochiy, A. M.; Kulagina, M. M.; Mintairov, S. A.; Kalyuzhnyy, N. A.; Maximov, M. V.; Zhukov, A. E.

doi:10.1134/s1063782621030167

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…It has one real-valued root (t 0 ). Having found it, we determine the position of maximum (λ 0 ) with the use of (10). We determine the value of function f max at λ 0 by inserting t 0 into (17).…”

Section: Discussionmentioning

confidence: 99%

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Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra

et al. 2022

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An improved technique for thermal resistance measurement of edge-emitting diode lasers using spontaneous emission spectra, collected through the opening in the n-contact within the range of operating currents, has been proposed. The advantage of the proposed technique is that systematic errors typical for measurements based on lasing spectra are excluded. The accuracy of the method was verified by measuring the dependence of the thermal resistance on the cavity length for diode lasers with 100 μm strip width. Obtained results are in good agreement with the model, and the minimum measurement error was ±0.1 K/W. The proposed technique can be used in metrological support of fabrication process of semiconductor lasers. Keywords: laser diode, thermal resistance, spontaneous emission.

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Section: Discussionmentioning

confidence: 99%

“…All the experimental results reported below were obtained using broad area laser diodes with a stripe contact width of 100 µm, which were examined in [10] (and denoted as NWG). Lasers were mounted p-side down onto copper heatsink with indium solder.…”

Section: Measurement Technique Of Spontaneous Emission Spectramentioning

confidence: 99%

Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra

et al. 2022

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Reducing thermal resistance of high-power semiconductor diode lasers with coupled waveguides

Payusov¹,

Beckman²,

Kornyshov³

et al. 2023

Optics & Laser Technology

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Temperature dependence of width band gap in In_xga_1-Xasquantum well in presence of transverse strong magnetic field

et al. 2023

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This article investigated the temperature dependence of the width band gap in InxGa1-xAs quantum well in the presence of a transverse strong magnetic field. A new method was proposed for determining the width band gap of GaAs/InxGa1-xAs heterostructures based on a InxGa1-xAs quantum well in the presence of a magnetic field and temperature. An analytical expression is obtained for calculating the width band gap of a rectangular quantum well at various magnetic fields and temperatures.

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Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots

Cited by 5 publications

References 9 publications

Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra

Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra

Reducing thermal resistance of high-power semiconductor diode lasers with coupled waveguides

Temperature dependence of width band gap in In_xga_1-Xasquantum well in presence of transverse strong magnetic field

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Effect of the Active Region and Waveguide Design on the Performance of Edge-Emitting Lasers Based on InGaAs/GaAs Quantum Well-Dots

Cited by 5 publications

References 9 publications

Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra

Thermal resistance measurement of edge-emitting semiconductor lasers using spontaneous emission spectra

Reducing thermal resistance of high-power semiconductor diode lasers with coupled waveguides

Temperature dependence of width band gap in Inxga1-Xasquantum well in presence of transverse strong magnetic field

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Product

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Temperature dependence of width band gap in In_xga_1-Xasquantum well in presence of transverse strong magnetic field