Effect of the axial temperature gradient on the formation of grown-in defect regions in Czochralski silicon crystals; reversion of the defect regions between the inside and outside of the Ring-OSF

Defect dynamics in the presence of oxygen in growing Czochralski silicon crystals

“…The collective dynamics of all reactions including the aggregation events and the transport of all participating species in a growing CZ crystal is termed the CZ defect dynamics. This dynamics in the absence of oxygen has been studied in detail [16][17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34]. These studies, however, do not directly quantify the formation of oxygen clusters in CZ crystals.…”

Classification of microdefects in semiconducting silicon

“…In addition, it was recently reported that, as per TEM observations, defects outside the ring constitute clusters of interstitial-type point defects and interstitial-type dislocation loops [19,20]. It was shown earlier that defects occurred at V < V crit2 (see Fig.…”

Defect dynamics in the presence of nitrogen in growing Czochralski silicon crystals

“…The theory of initial point defect incorporation in growing FZ and CZ crystals proposed by Voronkov [16] provided a breakthrough in understanding the FZ and CZ defect dynamics. A series of studies following this breakthrough accomplished the quantitative prediction of the microdefect distributions in both the presence and the absence of oxygen in CZ crystals [18,22,[24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41][42].…”