Effect of the hydrogen dilution on the local microstructure in hydrogenated amorphous silicon films deposited by radiofrequency magnetron sputtering

Daouahi, M.; Zellama, K.; Bouchriha, H.; Elkaim, P.

doi:10.1051/epjap:2000131

Cited by 16 publications

(33 citation statements)

References 41 publications

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“…High efficiency solar cells are necessary to convert solar energy to electrical energy at low cost. Since the quality of a-Si 1-x Ge x :H is not as good as that of a-Si:H, some attempts were carried out to improve the optical and electrical properties of a-Si 1-x Ge x :H by changing the preparation conditions and by annealing the samples [1][2][3][4][5][6][7]. In this study, the effect of annealing temperature on structural, electrical and optical properties of a-Si 0.47 Ge 0.53 :H alloys was investigated.…”

Section: Ntroductionmentioning

confidence: 99%

“…It is seen also that the 2000 cm -1 band increases in intensity relative to the 2100 cm -1 stretching mode indicating that hydrogen moves around in the network and is partially evolved, thus causing a change in the atomic density of the SiGe network. The hydrogen evolved from the films leads to structural relaxation caused by the annealing [4][5][6][7]. The hydrogen content (N H ) calculated by fitting the stretching mode before and after annealing for samples prepared at 200 °C and 250°C is given in table (1).…”

Section: Infrared Absorption Spectramentioning

confidence: 99%

“…where χ is the volume fraction of the crystalline phases transformed from the amorphous state at time t, n refers to the order of reaction and k is the effective overall reaction rate, which actually reflects the rate of crystallization [21,22] and is given by: According to equation (5) the values of the activation energies E c of crystallization deduced from the slopes of the plots of ln k versus1000/T for the a-Si 0.47 Ge 0.53 :H are also given in table (5). It seen that the activation energy of crystallization depends on the substrate temperature.…”

Section: Effect Of Annealing and Substrate Temperature On Structural mentioning

confidence: 99%

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Effect of annealing and substrate temperature on structural and optoelectronic properties of a-SiGe:H thin films

Ghazala¹,

Zaidia²

2017

IOSR JEN

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Abstract:-Hydrogenated a-Si 0.47 Ge 0.53 thin films were prepared at 200 and 250C by the glow-discharge deposition technique from SiH 4 and GeH 4 gases. The Structural changes of the films were characterized using IR, XRD and SEM after annealing at 300C for 8h. Remarkable structural degradation was observed upon annealing because of the formation of hydrogen bubbles which give rise to surface bumps. The influence of annealing on the electrical conductivity and optical energy gap of a-Si 0.47 Ge 0.53 :H thin films was discussed. The results revealed that the electrical conductivity is increased with increasing the annealing temperatures and /or annealing time, while optical energy gap is decreased. On the other hand it was found that the activation energy of crystallization deduced from the annealing time dependence of the conductivity using Avrami's equation is structural dependent.

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Section: Ntroductionmentioning

confidence: 99%

Section: Infrared Absorption Spectramentioning

confidence: 99%

Section: Effect Of Annealing and Substrate Temperature On Structural mentioning

confidence: 99%

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Effect of annealing and substrate temperature on structural and optoelectronic properties of a-SiGe:H thin films

Ghazala¹,

Zaidia²

2017

IOSR JEN

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“…Fig. 3 illustrates the case of an SL hydrogenated at a flow of 1.5 ml/min and annealed at 400 °C for 1 and 10 h. In the as-deposited, unannealed layer (spectrum C1) H is bonded to Ge and Si as monohydride as shown by the peaks at 1880 cm -1 and at 2010 cm -1 , respectively, which are the fingerprints of such bonds [18][19][20][21]. The shape of the Si-H peak indicates that the peak of the Si di-hydride bond, Si-H 2 , at about 2140 cm -1 could also exist hidden in the tail of the Si-H peak at high wave numbers.…”

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Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing

Frigeri¹,

Serényi

Csík

et al. 2013

Applied Surface Science

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The relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing.

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“…This is due to the presence of higher hydrides (SiH 2 , SiH 3 ) on the surface of voids. 18,[23][24][25] However, in the definition of the R* parameter, both modes contribute to the HSM. 22 Increasing HSM contribution with increasing P dep led to increased porosity in a-Si:H films, but a-Si:H films deposited above 0.47 mbar were highly porous and oxidized immediately after taking out from deposition tool.…”

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confidence: 99%

Solid-phase crystallization of ultra high growth rate amorphous silicon films

Sharma

Ponomarev

Verheijen

et al. 2012

Journal of Applied Physics

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. The influence of overconstraint on the spatial distribution of mobility in an amorphous network J. Chem. Phys. 135, 194505 (2011) Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system J. Appl. Phys. 110, 023709 (2011) Electrostatic charging and charge transport by hydrated amorphous silica under a high voltage direct current electrical field J. Chem. Phys. 134, 214703 (2011) Additional information on J. Appl. Phys. In this paper, we report on the deposition of amorphous silicon (a-Si:H) films at ultra-high growth rate (11-60 nm/s) by means of the expanding thermal plasma technique, followed by solid-phase crystallization (SPC). Large-grain ($1.5 lm) polycrystalline silicon was obtained after SPC of high growth rate ($25 nm/s) deposited a-Si:H films. The obtained results are discussed by taking into account the impact of the a-Si:H microstructure parameter R* as well as of its morphology, on the final grain size development. V C 2012 American Institute of Physics.

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Effect of the hydrogen dilution on the local microstructure in hydrogenated amorphous silicon films deposited by radiofrequency magnetron sputtering

Cited by 16 publications

References 41 publications

Effect of annealing and substrate temperature on structural and optoelectronic properties of a-SiGe:H thin films

Effect of annealing and substrate temperature on structural and optoelectronic properties of a-SiGe:H thin films

Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing

Solid-phase crystallization of ultra high growth rate amorphous silicon films

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