Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

Efremov, A. A.; Bochkareva, N. I.; Gorbunov, R. I.; Lavrinovich, D. A.; Rebane, Yu. T.; Tarkhin, D. V.; Shreter, Yu. G.

doi:10.1134/s1063782606050162

Cited by 222 publications

(95 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Both samples show the efficiency of < 1%, which means a large portion of the input power is lost from the Joule heating effect. 30 Since the light emissions principle of the SSI-LED is the black body emission, authors used the Forsthe and Wortihng equation 26 to compare its efficiency with that of the conventional incandescent light bulb. Assuming that the new SSI-LED and the incandescent light bulb are operated with the same 10 W power, the light emission efficiency of a single conductive path with the 75 nm (r) × 10 nm (l) dimension should be 2.6 × 10 11 times that of a tungsten filament with the 100 μ (r) × 2 m (l) size, which is an unreasonably high number.…”

Section: Resultsmentioning

confidence: 99%

Light Emission Enhancement by Embedding Nanocrystalline Cadmium Selenide in Amorphous ZrHfO High-k Dielectric Thin Film Deposited on Silicon Wafer

Lin

Kuo

2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The enhancement of white light emission from the amorphous Zr-doped HfO2 film on the p-type silicon wafer with the embedding of a nanocrystalline cadmium selenide layer has been studied through understanding characteristics of the emitted light, leakage current, surface topography, driving methods and time. All changes of the emission characteristics can be explained with the formation and thermal excitation of the conductive paths. The deterioration of the light emission process over a long period of 5,664 hours has also been investigated and discussed. There are many potential applications of this kind of light emitting device.

show abstract

Section: Resultsmentioning

confidence: 99%

Light Emission Enhancement by Embedding Nanocrystalline Cadmium Selenide in Amorphous ZrHfO High-k Dielectric Thin Film Deposited on Silicon Wafer

Lin

Kuo

2015

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…This effect is well recognized as the efficiency droop. Various models have thus far been proposed to explain the droop, such as junction heating [3], electron overflow [4], [5], reduced effective radiative recombination rate due to the elevated plasma temperature caused by carrier-carrier and carrier-photon collisions [5], current crowding [6] and Auger recombination [7].…”

mentioning

confidence: 99%

On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes

Zhang

Tan

et al. 2013

J. Display Technol.

View full text Add to dashboard Cite

“…[49][50][51][52][53][54] However the original cause of efficiency droop is still inconclusive up to this point. On the other hand, our Auger calculations assume direct transitions and do not employ phonons to achieve higher values 17 simplifying the message that Auger recombination is appreciable in III-nitride semiconductors.…”

Section: -7mentioning

confidence: 99%

Effect of interface roughness on Auger recombination in semiconductor quantum wells

et al. 2017

View full text Add to dashboard Cite

Auger recombination in a semiconductor is a three-carrier process, wherein the energy from the recombination of an electron and hole pair promotes a third carrier to a higher energy state. In semiconductor quantum wells with increased carrier densities, the Auger recombination becomes an appreciable fraction of the total recombination rate and degrades luminescence efficiency. Gaining insight into the variables that influence Auger recombination in semiconductor quantum wells could lead to further advances in optoelectronic and electronic devices. Here we demonstrate the important role that interface roughness has on Auger recombination within quantum wells. Our computational studies find that as the ratio of interface roughness to quantum well thickness is increased, Auger recombination is significantly enhanced. Specifically, when considering a realistic interface roughness for an InGaN quantum well, the enhancement in Auger recombination rate over a quantum well with perfect heterointerfaces can be approximately four orders of magnitude.

show abstract

Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

Cited by 222 publications

References 8 publications

Light Emission Enhancement by Embedding Nanocrystalline Cadmium Selenide in Amorphous ZrHfO High-k Dielectric Thin Film Deposited on Silicon Wafer

Light Emission Enhancement by Embedding Nanocrystalline Cadmium Selenide in Amorphous ZrHfO High-k Dielectric Thin Film Deposited on Silicon Wafer

On the Effect of Step-Doped Quantum Barriers in InGaN/GaN Light Emitting Diodes

Effect of interface roughness on Auger recombination in semiconductor quantum wells

Contact Info

Product

Resources

About