2012
DOI: 10.1051/epjap/2012120372
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Effect of the nature of the anode buffer layer – MoO3, CuI or MoO3/CuI – on the performances of organic solar cells based on oligothiophene thin films deposited by sublimation

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Cited by 10 publications
(9 citation statements)
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“…This distinct grain structure and the gaps between the grains result in a high density of grain boundaries in the thin films, respectively. Such a granular structure is often reported for CuI thin films grown with various deposition methods and is also common for CuI thin films used in optoelectronic devices, where grain boundary effects should therefore also be expected. Even epitaxial thin films grown on crystalline substrates, for example, ZnO show (well‐oriented) rotational domains such that grain boundary effects should also be present and can limit the performance of devices especially for lateral transport.…”
Section: Resultsmentioning
confidence: 99%
“…This distinct grain structure and the gaps between the grains result in a high density of grain boundaries in the thin films, respectively. Such a granular structure is often reported for CuI thin films grown with various deposition methods and is also common for CuI thin films used in optoelectronic devices, where grain boundary effects should therefore also be expected. Even epitaxial thin films grown on crystalline substrates, for example, ZnO show (well‐oriented) rotational domains such that grain boundary effects should also be present and can limit the performance of devices especially for lateral transport.…”
Section: Resultsmentioning
confidence: 99%
“…By comparison with MoO 3 , we showed that the surface energy value of CuI is far lower, 59.3 mJ m −2 for the former and 26.3 mJ m −2 for the later. Such difference can justify, as in the case of CuPc, the difference in molecular orientation obtained by changing the HTL and therefore the difference in OPVC efficiency . However, in the case of AlPcCl, as is shown in Figure , the effectiveness of the template effect of CuI is dependent on the deposition rate of the layer .…”
Section: Discussionmentioning
confidence: 95%
“…The thickness and deposition rate of the MoO 3 layer were set to 3 nm and 0.02 nm s −1 , respectively . In the case of CuI, the deposition rate, which has a strong influence on cell properties, was set to 0.005 nm s −1 while its thickness was 1.5 nm . For C 60 , the deposition rate and final thickness were set to 0.05 nm s −1 and 40 nm, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…We derive the dielectric function, absorption coefficient and the transmission using variable angle spectroscopic ellipsometry (VASE) and in a separate experiment UV-VIS transmission of solution-cast thin-film CuI. We denote that earlier studies covered predominantly vacuum-deposited CuI films [36,37]. The response of a 34 nm solution-cast thin-film reflects an absorption feature at 400 nm (α ¼0.5 cm À 1 ).…”
Section: Resultsmentioning
confidence: 99%