Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

Gauthier, Jean‐Philippe; Robert, Cédric; Almosni, Samy; Léger, Yoan; Perrin, Mathieu; Even, Jacky; Balocchi, Andréa; Carrère, Hélène; Marie, X.; Cornet, Charles; Durand, Olivier

doi:10.1063/1.4904939

Cited by 2 publications

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“…(In,Ga)As/GaP QDs lasing was even recently reported on GaP substrate by Heidemann et al [25]. Meanwhile, structural properties of these QDs were investigated at a large scale in terms of size and density [20,[26][27][28] and at the atomic scale through transmission electron microscopy (TEM), planview, and cross-sectional scanning tunneling microscopy (STM) [29][30][31][32], revealing a complex and inhomogeneous indium incorporation behavior inside the QDs. Fukami et al first noticed in their pioneering works the vicinity of the conduction band minimum in the QD and the X valley of GaP with a simple model-solid theory approach [33].…”

Section: Introductionmentioning

confidence: 99%

Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots

et al. 2016

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publicationCitation for published version (APA): Robert, C., Pereira Da Silva, K., Nestoklon, M. O., Alonso, M. I., Turban, P., Jancu, J-M., ... Cornet, C. (2016). Electronic wave functions and optical transitions in (In,Ga)As/GaP quantum dots. Physical Review B, 94(7), 1-11. [075445]. DOI: 10.1103/PhysRevB.94.075445 General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. We study the complex electronic band structure of low In content InGaAs/GaP quantum dots. A supercell extended-basis tight-binding model is used to simulate the electronic and the optical properties of a pure GaAs/GaP quantum dot modeled at the atomic level. Transitions between hole states confined into the dots and several X Z -like electronic states confined by the strain field in the GaP barrier are found to play the main role on the optical properties. Especially, the calculated radiative lifetime for such indirect transitions is in good agreement with the photoluminescence decay time measured in time-resolved photoluminescence in the µs range. Photoluminescence experiments under hydrostatic pressure are also presented. The redshift of the photoluminescence spectrum with pressure is also in good agreement with the nature of the electronic confined states simulated with the tight-binding model.

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