Metamorphic III–V semiconductor lasers grown on silicon

Tournié, E.; Cerutti, L.; Rodriguez, J. B.; Liu, Huiyun; Wu, Jiang; Chen, Siming

doi:10.1557/mrs.2016.24

Cited by 49 publications

(29 citation statements)

References 50 publications

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“…High quality GaSb thin ilms have been reported without resorting to several-µm-thick metamorphic bufer layers [18]. The prevailing approach to perform IMF growth of III-Sb on Si is to begin with an ultra-thin AlSb nucleation layer [19][20][21], such that a periodic array of 90°m isit dislocations, akin to those in the IMF growth of GaSb on GaAs, can be created. Apart from the advantages of the IMF growth mode, the thermal expansion coeficient of AlSb (2.55 × 10 -6 /K at 300 K) is very close to that of Si (2.59 × 10 -6 /K at 300 K).…”

Section: Fundamental Challenges In Iii-v Hetero-epitaxy On (001) Siliconmentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

125

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Please note: Changes made as a result of publishing processes such as copy-editing, formatting and page numbers may not be reflected in this version. For the definitive version of this publication, please refer to the published source. You are advised to consult the publisher's version if you wish to cite this paper.This version is being made available in accordance with publisher policies. See http://orca.cf.ac.uk/policies.html for usage policies. Copyright and moral rights for publications made available in ORCA are retained by the copyright holders. U N C O R R E C T E D P R O O F ARTICLE INFO ABSTRACTMonolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

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Section: Fundamental Challenges In Iii-v Hetero-epitaxy On (001) Siliconmentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

125

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“…Another advantage is the high refractive index contrast of silicon-on-insulator (SOI) waveguides, which enables a very dense integration of photonic components [1,2]. Conversely, the narrow bandgap of the compound semiconductor GaSb and related heterostructures is commonly utilized for optoelectronic devices in the infrared (IR) wavelength regime [3][4][5][6][7]. Hence, the monolithic integration of GaSb-based heterostructures on Si substrates would lead to cost-efficient on-chip sensing applications which take advantage of the unique optoelectronic properties of III-V materials on the one hand and of the established and scalable fabrication of silicon-based photonics integration circuits (PICs) on the other hand.…”

Section: Introductionmentioning

confidence: 99%

“…As optoelectronic device performance degrades quickly with the presence of relaxation defects, it is important to achieve a high crystal quality in the active device area and to separate the latter clearly from the region of plastic relaxation. Different methods have been investigated to reduce the defect density in the active layer stack, e.g., the growth of a thick metamorphic buffer or the implementation of defect filter layers such as strained layer superlattices [4,[12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Baryshnikova

Mols

Ishii³

et al. 2020

Crystals

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Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

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“…O VER the last few years, an almost exponential growth in global internet traffic has raised significant challenges for the modern Datacentre and Datacom industries, which require an efficient interconnection framework to support the large bandwidth demand with low power consumption. These demanding requirements have created a major "bottleneck" for conventional copper interconnections in transporting digital information on different scales, ranging from worldwide links to inter-and intra-chip communications [1], [2]. The integration of optical interconnects with photonic integrated circuits (PICs) on a silicon platform has become one of the most promising candidates to solve this problem [3]- [10].…”

Section: Introductionmentioning

confidence: 99%

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Liao

Chen

Huo

et al. 2017

IEEE J. Select. Topics Quantum Electron.

Self Cite

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In this paper, we report monolithically integrated III-V quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated Manuscript lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology.Index Terms-Molecular beam epitaxy, quantum dots, semiconductor lasers, silicon photonics, focused ion beam. College London, where he is currently a Professor of semiconductor photonics. His research interests include the nanometer-scale engineering of low-dimensional semiconductor structures (such as quantum dots, quantum wires, and quantum wells) by using molecular beam epitaxy and the development of novel optoelectronic devices including lasers, detectors, and modulators by developing novel device process techniques. He has co-authored more than 300 papers in the area of semiconductor materials and devices.

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Metamorphic III–V semiconductor lasers grown on silicon

Abstract: Abstract

Cited by 49 publications

References 50 publications

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

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