Effect of the Organic Semiconductor Side Groups on the Structural and Electronic Properties of Their Interface with Dopants

Babuji, Adara; Silvestri, Francesco; Pithan, Linus; Richard, Audrey; Geerts, Yves; Tessler, Nir; Solomeshch, Olga; Ocal, Carmen; Barrena, Esther

doi:10.1021/acsami.0c17273

Cited by 7 publications

(7 citation statements)

References 59 publications

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“…This is in agreement with the electrochemical properties of iodine [ 44,45 ] and the deep lying HOMO of C8‐BTBT‐C8. [ 46–49 ] In addition, the UV–vis–NIR spectra of the doped films did not show any charge transfer absorption band confirming that no charge transfer process occurs (i.e., C8‐BTBT‐C8 is not oxidized; Figure S8, Supporting Information). Further, it is known that from the edge of the lowest energy absorption band it is possible to estimate the HOMO–LUMO bandgap.…”

Section: Resultsmentioning

confidence: 95%

Chemical Doping of the Organic Semiconductor C8‐BTBT‐C8 Using an Aqueous Iodine Solution for Device Mobility Enhancement

Babuji

Temiño

et al. 2022

Adv Materials Technologies

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Despite these encouraging results, the performance of OFETs is still severely limited by factors such as contact resistance (R c ) [9] and charge trapping. [10] When the highest occupied molecular orbital (HOMO) or the lowest unoccupied molecular orbital (LUMO) of a p-type or n-type OSC, respectively, and the electrodes work-function are not aligned, charge injection is significantly hindered by the high energy barrier and high contact resistance values are extracted. [11] In order to confront these issues, different electrode engineering approaches have been proposed. For example, the work-function of the metal electrodes can be modified to match the OSC energy level by using self-assembled molecular monolayers (SAMs) in bottom-contact devices or by inserting a charge injection layer in top-contact OFETs. [12][13][14] Another source that prevents OSCs from realizing their instrinsic charge carrier mobilities is charge trapping. In the energy gap of OSCs, electronic states can appear due to the presence of chemical impurities or defects that trap mobile charge carriers, thus causing OFETs to deviate from the ideal behavior. [15] It has been previously reported that passivation of the dielectric layer or the use of OSC:insulating polymer blends are appealing routes to decrease the dielectric interfacial trap density. [16] Nonetheless, traps are also present at the metal-OSC interface, grain boundaries and thin film structural inhomogeneities. [15] Chemical doping is a suitable way to modify the electronic properties of OSCs, which consists in adding a small percentage of species able to donate (n-doping) or accept (p-doping) an electron to or from the OSC, respectively. Doping of semiconductors is a well-established strategy in inorganic transistors with great success also in organic optoelectronics, especially in OLEDs and solar cells. [17][18][19][20][21][22] Regarding OFET devices, doping has mainly been exploited to increase device mobility, adjust the threshold voltage, fill up trap states, or to improve charge injection by contact doping. [23] Although recent works have demonstrated that doping can be a key enabler for high performing OFETs, the progress of organic semiconductors doping is stillThe performance of organic field-effect transistors is still severely limited by factors such as contact resistance and charge trapping. Chemical doping is considered to be a promising key enabler for improving device performance, although there is a limited number of established doping protocols as well as a lack of understanding of the doping mechanisms. Here, a very simple doping methodo logy based on exposing an organic semiconductor thin film to an aqueous iodine solution is reported. The doped devices exhibit enhanced device mobility, which becomes channel-length independent, a decreased threshold voltage and a reduction in the density of interfacial traps. The device OFF current is not altered, which is in agreement with the spectroscopic data that points out that no charge transfer processes are occurring....

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Section: Resultsmentioning

confidence: 95%

Chemical Doping of the Organic Semiconductor C8‐BTBT‐C8 Using an Aqueous Iodine Solution for Device Mobility Enhancement

Babuji

Temiño

et al. 2022

Adv Materials Technologies

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“…[139,140] Basically, dopant could improve thin-film morphology, crystal quality, molecular parking order, and carrier transport. [141][142][143] There are several basic requirements for selecting dopants, including similar solubility, molecular configuration and size with OSC, and appropriate energy levels for charge transfer. [144] Anthopoulos et al improved device performance by doping, in which three different additives fluorinated fullerene C 60 F 48 , Lewis acids B(C 6 F 5 ) 3 , and Zn(C 6 F 5 ) 2 were added, respectively, to obtain specific C8-BTBT ternary blend systems with better crystallization.…”

Section: Dopingmentioning

confidence: 99%

Structures, Properties, and Device Applications for [1]Benzothieno[3,2‐b]Benzothiophene Derivatives

Xie

Liu

Sun

et al. 2022

Adv Funct Materials

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1]benzothieno[3,2-b]benzothiophene (BTBT), with two benzene rings as the outermost rings, is referred to as diacene-fused ladder-type π-conjugated thienothiophenes. During the last three decades, derivatives based on BTBT core have been extensively studied due to their tremendous application prospects in organic field-effect transistors (OFETs) and organic optoelectronic devices. In order to further advance the development of organic electronics, new materials are constantly being synthesized and new methods are constantly evolving. This review mainly focuses on the crystal and electronic structures of BTBT derivatives, the soluble and thermal properties, the fabrication methods, as well as the strategies for performance improvement and optoelectronic applications including OFETs, photodetectors, synaptic devices, and organic light-emitting transistors. As one of the most promising organic materials, the insight into BTBT-based molecules will accelerate their potential application and provide important reference value for the development toward commercialized and industrialized organic semiconducting products.

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“…The structural characteristics of the NTD-DCV nanopatchdoped NTDT thin films were further analyzed through 2D-GIWAXS measurements since the degree of CT effect can be related to the ordering and orientation of the dopant on the doping interface. 74 As shown in Fig. S11 (ESI †), the neat NTDT thin film showed a d-spacing value of 14.96 Å along the q z -direction (q z = 0.42 Å À1 ), which is well matched with the (100) plane of NTDT single crystal indicating edge-on orientation.…”

Section: Ntdt-dcv As An Interfacial Nanopatch Dopantmentioning

confidence: 76%

A novel n-type organic semiconductor comprising a 1,5-naphthyridine-2,6-dione unit

Kim

Choi

et al. 2022

J. Mater. Chem. C

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Effect of the Organic Semiconductor Side Groups on the Structural and Electronic Properties of Their Interface with Dopants

Cited by 7 publications

References 59 publications

Chemical Doping of the Organic Semiconductor C8‐BTBT‐C8 Using an Aqueous Iodine Solution for Device Mobility Enhancement

Chemical Doping of the Organic Semiconductor C8‐BTBT‐C8 Using an Aqueous Iodine Solution for Device Mobility Enhancement

Structures, Properties, and Device Applications for [1]Benzothieno[3,2‐b]Benzothiophene Derivatives

A novel n-type organic semiconductor comprising a 1,5-naphthyridine-2,6-dione unit

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