Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

Sung, Min-Gyu; Kim, Sook Joo; Joo, Moon Sig; Roh, Jae–Sung; Ryu, Cheol-Hwi; Hong, Sok Chul; Kim, Heonho; Kim, Yong Soo

doi:10.1016/j.sse.2011.05.007

Cited by 12 publications

(2 citation statements)

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“…In BRS devices, the set process is induced by the movement of defects (such as oxygen vacancies or metal ions), whereas thermally assisted dissolution of the conduction channel at its thinnest point is responsible for the reset process [68]. Generally, BRS occurs if at least one of the electrodes is electrochemically active (EA), such as Ti or Al [69], or it can occur due to a gradient in the concentration of defects/oxygen vacancies in the RS active layer [70].…”

Section: Bipolar Resistive Switchingmentioning

confidence: 99%

Advances in resistive switching based memory devices

Munjal¹,

Khare²

2019

J. Phys. D: Appl. Phys.

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Among the emerging memories, resistive switching (RS) based resistive random-access memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal structures, low power consumption, long endurance and retention characteristics, low fabrication cost, ultrafast switching, and CMOS compatibility. In recent years, several oxides, chalcogenides, polymers and their composites have been explored for RS devices. Many of these studies show a high resistance ratio of the OFF and ON states with good RS characteristics. Some of these studies also show the realization of multifunctional RS devices such as the simultaneous switching of resistance and magnetic states. In order to scale up RS-based RRAMs, a detailed understanding of the occurrence of RS is very much desirable. In this review, we provide an overview of the current understanding, recent advances and future outlook of RS-based RRAM devices along with fundamental concepts of the different types of RS, and conventional as well as novel measurement techniques which are being used to characterize RS devices. Observations of RS in different materials are presented, and RS mechanisms, such as the valence change mechanism and electrochemical metallization memory, are discussed in detail. An overview of multifunctional RS devices and the main challenges faced in scaling up RS devices is also presented.

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Section: Bipolar Resistive Switchingmentioning

confidence: 99%

Advances in resistive switching based memory devices

Munjal¹,

Khare²

2019

J. Phys. D: Appl. Phys.

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“…However, due to the presence of intrinsic defects such as oxygen vacancies (VO), titanium vacancies (VTi) and titanium interstitials (Tii), the optical and electrical properties of TiO2 do not meet the desired standard for its applications in industry [7]. However, it is possible to enhance the electrical and optoelectronic properties of TiO2 nanostructures by two ways: [a] increasing oxygen concentration and simultaneously decreasing intrinsic defects, and [b] doping with selected elements [8]. Selective doping of TiO2 with elements such as Fe [9], Co [10], Al [11], W [12] and other elements might enable it to achieve better electrical and optical properties for their practical applications.…”

Section: Introductionmentioning

confidence: 99%

Elaboration and Characterization of in Doped TiO<sub>2</sub> Thin Films

Hanini

Bouabellou

Bouachiba³

et al. 2019

DDF

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Undoped and indium (In) doped TiO2 thin films were deposited by sol-gel method onto glass substrates. Structural, optical and electrical properties of films were studied. X-rays diffraction patterns showed that the TiO2 films consist of anatase phase. AFM images revealed that the surface roughness of In:TiO2 films is smoother than that of undoped TiO2 films. UV–Vis transmittance results showed TiO2 films have signiﬁcant optical absorption in the region of 300–350 nm and are fully transparent in the visible. Both film thickness and refraction index in dependence on the fraction of In doping are derived from TE and TM optical guided modes excited in a prism coupler. The optical gap Eg decreases from 3.50 eV for undoped TiO2 film to 3.43 eV at 2 at.% In doping and then increases for doping with indium at 10 at.%. The electrical characterization shows a maximum electrical conductivity of 2.7 (S/cm) obtained for the film doped with 10 at.% In.

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Atomic Layer Deposition Films for Resistive Random‐Access Memories

Hao,

Peng,

Zierold

et al. 2024

Adv Materials Technologies

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Resistive random‐access memory (RRAM) stands out as a promising memory technology due to its ease of operation, high speed, affordability, exceptional stability, and potential to enable smaller memory devices with sizes under 10 nm. This has drawn significant attention, with atomic layer deposition (ALD) emerging as an ideal technology to tackle the challenges of nanoscale fabrication in the micro‐ and nanomanufacturing industry. ALD offers technological advantages such as functional multiple‐layer stacking, doping capabilities, and incorporating oxygen reservoirs or reactive layers. These factors contribute to achieving more intriguing, stable, and reliable nonvolatile resistance switching behaviors in RRAM. Specifically, ALD greatly benefits RRAM, that relies on the valence change mechanism, where high‐k transition metal oxides are commonly used as switching materials, and precise control over oxygen vacancies is achievable. This review provides a comprehensive overview of ALD films used in RRAM, delves into resistive switching properties and microscopic mechanisms in binary and ternary oxides and nitrides, and explores the impact of ALD‐prepared electrodes. Furthermore, the current status and future prospects of ALD‐based RRAM are highlighted, which is poised to catalyze further advancements in the fields of information storage and neural networks.

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Effect of the oxygen vacancy gradient in titanium dioxide on the switching direction of bipolar resistive memory

Cited by 12 publications

References 10 publications

Advances in resistive switching based memory devices

Advances in resistive switching based memory devices

Elaboration and Characterization of in Doped TiO<sub>2</sub> Thin Films

Atomic Layer Deposition Films for Resistive Random‐Access Memories

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