Effect of the PbOx thickness on the microstructure and electrical properties of PLT thin films prepared by RF magnetron sputtering

Wu, Jiagang; Xiao, Dingquan; Zhu, Jiliang; Zhu, Jianguo; Tan, Jun

doi:10.1016/j.surfcoat.2007.08.059

Search citation statements

Order By: Relevance

Paper Sections

Select...

Introduction1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2009

2014

Publication Types

Select...

Article4

Relationship

Self Cite0

Independent4

Authors

Journals

Cited by 4 publications

(1 citation statement)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To control the crystalline orientation of the ferroelectric thin films, a large number of buffer layers like PbO, PbTiO 3 , Ti, LaNiO 3 , TiO x , TiN and ZrO 2 have been investigated by many research groups [17][18][19][20][21][22]. A critical aspect in the growth of highly oriented PZT films on NiTi/Si substrate without interdiffusion and reaction at their interface is the selection of an appropriate buffer layer.…”

Section: Introductionmentioning

confidence: 99%

Influence of buffer layer on structural, electrical and mechanical properties of PZT/NiTi thin film heterostructures

Choudhary

Kaur

2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Influence of buffer layer on structural, electrical and mechanical properties of PZT/NiTi thin film heterostructures

Choudhary

Kaur

2012

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Enhanced ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3–0.05PbTiO3 thin films with Pb(Zr0.52,Ti0.48)O3 seed layer

Zhu

et al. 2012

Ceramics International

View full text Add to dashboard Cite

Effect of residual stress on the ferroelectric property of (Pb0.90La0.10)Ti0.975O3 thin films

Wu¹,

Xiao²,

Zhu³

2009

Journal of Applied Physics

View full text Add to dashboard Cite

Highly (001)-, (100)-, (101)-, and (110)-oriented (Pb0.90La0.10)Ti0.975O3 (PLT) thin films were deposited on the LaNiO3(001)/Pt(111)/Ti/SiO2/Si(100), LaNiO3/SiO2/Si(100), PbTiO3/Pt(111)/Ti/SiO2/Si(100), and LaNiO3(110)/Pt(111)/Ti/SiO2/Si(100) substrates by rf magnetron sputtering. The orientation dependence of ferroelectric properties of the PLT films was investigated. The result shows that the (001)-oriented PLT thin films exhibit enhanced ferroelectric properties (2Pr=61.1 μC/cm2 and 2Ec=179 kV/cm). The residual stress of the PLT thin films with different orientations was measured by x-ray diffraction (sin2 Ψ method) for illuminating the related physical mechanisms. The result shows that the enhanced ferroelectric properties of (001)-oriented PLT thin films should be attributed to low residual stress.

show abstract

Effect of the PbOx thickness on the microstructure and electrical properties of PLT thin films prepared by RF magnetron sputtering

Cited by 4 publications

References 20 publications

Influence of buffer layer on structural, electrical and mechanical properties of PZT/NiTi thin film heterostructures

Influence of buffer layer on structural, electrical and mechanical properties of PZT/NiTi thin film heterostructures

Enhanced ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3–0.05PbTiO3 thin films with Pb(Zr0.52,Ti0.48)O3 seed layer

Effect of residual stress on the ferroelectric property of (Pb0.90La0.10)Ti0.975O3 thin films

Contact Info

Product

Resources

About