Enhanced ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3–0.05PbTiO3 thin films with Pb(Zr0.52,Ti0.48)O3 seed layer

Pu, Yong; Zhu, Jiliang; Zhu, Xiaohong; Luo, Yuansheng; Li, Xuedong; Wang, Mingsong; Liu, Jing; Li, Xuhai; Zhu, Jianguo; Xiao, Dingquan

doi:10.1016/j.ceramint.2011.04.090

Cited by 6 publications

(2 citation statements)

References 19 publications

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“…It may be related to the growth rate anisotropy of the NBT films along different orientations. At 550°C, the degrees of (110) orientation for NBTFe on Si, Pt/TiO 2 /SiO 2 /Si and AZO/glass are 31, 36 and 57 %, respectively calculated by the Lotgering factor [25]. This strongest orientation degree of the (110) diffraction peak on AZO/glass indicates the high amount of (110)-oriented grain, which may be due to the fact that the oxide electrode of AZO can promote the nucleation and grain growth of the NBTFe films.…”

Section: Resultsmentioning

confidence: 99%

Structural, ferroelectric and dielectric properties of Na0.5Bi0.5(Ti0.98Fe0.02)O3 thin films on different substrates

Yao

Yang

Feng

et al. 2015

J Mater Sci: Mater Electron

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Na 0.5 Bi 0.5 (Ti 0.98 Fe 0.02 )O 3 (NBTFe) thin films have been prepared on monocrystalline Si, Al-doped ZnO/glass and Pt/TiO 2 /SiO 2 /Si substrates by metal organic decomposition combined with sequential layer annealing. The structure, leakage current, ferroelectric and dielectric properties of NBTFe thin films are very sensitive to the using substrates. The NBTFe on Si exhibits a competitive growth mode with various oriented crystallites at different annealing temperature. At 550°C, the NBTFe on all the substrates crystallize into the pure rhombohedral perovskite structure with an obvious difference in orientation. The electrical measurements were conducted on metalferroelectric-semiconductor and metal-ferroelectric-metal capacitors. The NBTFe film on Si exhibits the capacitancevoltage curve with a maximum memory window of 2 V at the applied voltage of ±6 V originated from the ferroelectric polarization. The NBTFe film on Al-doped ZnO/-glass shows a round polarization-electric field hysteresis loop due to the large contribution from the leakage current. In contrast, a large remanent polarization (P r ) of 18 lC/ cm 2 for NBTFe deposited on Pt/TiO 2 /SiO 2 /Si can be obtained. Also, the NBTFe thin film on Pt/TiO 2 /SiO 2 /Si shows a high e r of 313 and low tan d of 0.1 at 100 kHz.

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Section: Resultsmentioning

confidence: 99%

Structural, ferroelectric and dielectric properties of Na0.5Bi0.5(Ti0.98Fe0.02)O3 thin films on different substrates

Yao

Yang

Feng

et al. 2015

J Mater Sci: Mater Electron

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“…In our previous work, various efforts have been made to improve the properties of PSTT single films, including the heat treatment of common rapid thermal annealing (RTA), [21] a novel two-step rapid thermal annealing (TSRTA) which can greatly reduce the duration of the film retained in high temperature, [22][23][24] preparing Pb(Zr 0.52 ,Ti 0.48 )O 3 (PZT52/48) as a seed layer, [25] and fabricating a composition differential multilayer thin film (PSTT10/45). [26] Recently, epitaxial PST films with good ferroelectric properties were also grown on electroded and buffered Si (100) substrates.…”

Section: Introductionmentioning

confidence: 99%

The interface density dependence of the electrical properties of 0.9Pb(Sc _0.5 Ta _0.5 )O ₃ –0.1PbTiO ₃ /0.55Pb(Sc _0.5 Ta _0.5 )O ₃ –0.45PbTiO

Liu

et al. 2015

Chinese Phys. B

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The 0.9Pb(Sc0.5Ta0.5)O3–0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3–0.45PbTiO3 multilayer thin films ((PSTT10/45)n, n = 1–6, 10) are deposited on SiO2/Si(100) substrates by radio frequency magnetron sputtering technique with LaNiO3 buffer and electrode layer, and the films are subsequently annealed by a two-step rapid thermal approach. It is found that the interfacial density of the film has an important influence on the electric property of the film. The electric property of the film increases and reaches its critical point with the increase of interface density, and then decreases with the further increase of the interface density. With an interfacial density of 16 μm−1, the film shows an optimized dielectric property (high dielectric constant, εr = 765, lowest dielectric loss, tanδ = 0.041, at 1 kHz) and ferroelectric property (highest remnant polarization, 2Pr = 36.9 μC/cm2, low coercive field, 2Ec = 71.9 kV/cm). The possible reason for the electric behavior of the film is the competition of the interface stress with the interface defect.

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Dielectric and ferroelectric properties of (100)-oriented 0.9Pb(Sc 0.5 Ta 0.5 )O 3 -0.1%PbTiO 3 /0.55Pb(Sc 0.5 Ta 0.5 )O 3 -0.45%PbTiO 3 heterostructures

Liu

et al. 2014

Applied Surface Science

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Enhanced ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3–0.05PbTiO3 thin films with Pb(Zr0.52,Ti0.48)O3 seed layer

Cited by 6 publications

References 19 publications

Structural, ferroelectric and dielectric properties of Na0.5Bi0.5(Ti0.98Fe0.02)O3 thin films on different substrates

Structural, ferroelectric and dielectric properties of Na0.5Bi0.5(Ti0.98Fe0.02)O3 thin films on different substrates

The interface density dependence of the electrical properties of 0.9Pb(Sc _0.5 Ta _0.5 )O ₃ –0.1PbTiO ₃ /0.55Pb(Sc _0.5 Ta _0.5 )O ₃ –0.45PbTiO

Dielectric and ferroelectric properties of (100)-oriented 0.9Pb(Sc 0.5 Ta 0.5 )O 3 -0.1%PbTiO 3 /0.55Pb(Sc 0.5 Ta 0.5 )O 3 -0.45%PbTiO 3 heterostructures

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Enhanced ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3–0.05PbTiO3 thin films with Pb(Zr0.52,Ti0.48)O3 seed layer

Cited by 6 publications

References 19 publications

Structural, ferroelectric and dielectric properties of Na0.5Bi0.5(Ti0.98Fe0.02)O3 thin films on different substrates

Structural, ferroelectric and dielectric properties of Na0.5Bi0.5(Ti0.98Fe0.02)O3 thin films on different substrates

The interface density dependence of the electrical properties of 0.9Pb(Sc 0.5 Ta 0.5 )O 3 –0.1PbTiO 3 /0.55Pb(Sc 0.5 Ta 0.5 )O 3 –0.45PbTiO

Dielectric and ferroelectric properties of (100)-oriented 0.9Pb(Sc 0.5 Ta 0.5 )O 3 -0.1%PbTiO 3 /0.55Pb(Sc 0.5 Ta 0.5 )O 3 -0.45%PbTiO 3 heterostructures

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The interface density dependence of the electrical properties of 0.9Pb(Sc _0.5 Ta _0.5 )O ₃ –0.1PbTiO ₃ /0.55Pb(Sc _0.5 Ta _0.5 )O ₃ –0.45PbTiO