Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

Torchynska, T. V.; Espínola, J.L. Casas; Hernández, Erasto Vergara; Khomenkova, L.; Delachat, F.; Slaoui, A.

doi:10.1016/j.tsf.2014.11.070

Cited by 27 publications

(20 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A common rule of thumb 32,38,75 in the PE-CVD and PA-CVD work appears to be that lower R = NH 3 /SiH 4 flow ratios (R < 1) lead to Si-rich films (Si/N ratio > 1.1), while higher R (R > 1) produces N-rich films (N/Si ratio > 1.4), with inclusions of Si nanostructures or nanoscale intrusions at even higher R values. Also, lower substrate temperatures tend to yield a-SiN x :H films, with thermal annealing required to reduce H content and lead to film crystallization, while higher processing temperatures produce c-SiN x films with reduced hydrogen content.…”

Section: Chemical Vapor Deposition (Cvd)mentioning

confidence: 99%

“…[27][28][29][30] Nitrogen-rich silicon and SiN x films also serve as host matrix for Si nanocrystals for use in optoelectronic device applications. 31,32 Other applications include the use of hydrogenated amorphous siliconnitrogen (a-SiN x :H) films as an insulating layer in thin-film transistors…”

mentioning

confidence: 99%

“…In this respect, Tables II and III present details of very recent vapor phase deposition techniques of SiN x thin films, along with a synopsis of intended applications. 15,16,[20][21][22][23][24][25][31][32][33][34][36][37][38] More specifically, Table II summarizes PVD and CVD work, while Table III focuses exclusively on atomic layer deposition ALD.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Kaloyeros

Jové

Goff

et al. 2017

ECS J. Solid State Sci. Technol.

133

View full text Add to dashboard Cite

This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.

show abstract

Section: Chemical Vapor Deposition (Cvd)mentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Kaloyeros

Jové

Goff

et al. 2017

ECS J. Solid State Sci. Technol.

133

View full text Add to dashboard Cite

show abstract

“…Besides, the optical properties of SiN x films can be controlled by the variation of chemical composition. There are many previous studies that demonstrated the changing band gap, refractive index and absorption coefficient with variation of atomic ratio N/Si (x = 0÷1.7) of the non-stoichiometric SiN x films [3,[6][7][8][9][10][11][12][13][14][15]. Mainly, these works were devoted to the hydrogen containing films deposited by plasma-enhanced or photo-chemical vapor deposition (CVD), radio-frequency glow discharge at temperatures < 500 °C.…”

mentioning

confidence: 99%

“…Mainly, these works were devoted to the hydrogen containing films deposited by plasma-enhanced or photo-chemical vapor deposition (CVD), radio-frequency glow discharge at temperatures < 500 °C. The similar studies of the low-hydrogen silicon nitride films deposited by radio frequency magnetron sputtering or low pressure CVD (LPCVD) techniques as well as studies devoted to SiN x photoluminescence (PL) have been discussed only for Si-rich films (x < 1.3) [3,[7][8][9][10][11][16][17][18][19][20][21]. In this work, we studied optical properties of the structures with Si-rich and N-rich light-emitting SiN x layer deposited by LPCVD.…”

mentioning

confidence: 99%

Blue and red light-emitting non-stoichiometric silicon nitride-based structures

Romanov

Пархоменко

Власукова

et al. 2018

Vescì Akademìì navuk Belarusì. Seryâ fizika-matematyčnyh navuk

View full text Add to dashboard Cite

The two triple-layered SiO 2 /SiN x /SiO 2 structures with Si-rich and N-rich silicon nitride active layer were fabricated on p-type Si-substrates by chemical vapour deposition. The SiN x layer of different composition (x = 0.9 and x = 1.4) was obtained by changing the ratio of the SiH 2 Cl 2 /NH 3 flow rates during deposition of a silicon nitride active layer (8/1 and 1/8, respectively). The spectroscopic ellipsometry and photoluminescence (PL) measurements showed that the refractive index, the absorbance and luminescence properties depend on a chemical composition of silicon nitride layers. The structures with Si-rich and N-rich SiN x active layers emit in the red (1.9 eV) and blue (2.6 eV) spectral ranges, respectively. The PL intensities of different structures are comparable. The rapid thermal annealing results in the intensity decrease and in the PL spectra narrowing in the case of SiN 1.4 active layer, whereas the increase in the emission intensity and the PL spectra broadening are observed in the case of the annealed sample with a SiN 0.9 active layer. The PL origin and the effect of annealing treatment have been discussed, taking into account the band tail mechanism of radiative recombination. Multilayered (SiO 2 /SiN x) n /Si structures are of practical interest for creation of effective light sources on the basis of current Si technology.

show abstract

Wafer‐Scale High‐Quality Microtubular Devices Fabricated via Dry‐Etching for Optical and Microelectronic Applications

et al. 2020

View full text Add to dashboard Cite

Mechanical strain formed at the interfaces of thin films has been widely applied to self‐assemble 3D microarchitectures. Among them, rolled‐up microtubes possess a unique 3D geometry beneficial for working as photonic, electromagnetic, energy storage, and sensing devices. However, the yield and quality of microtubular architectures are often limited by the wet‐release of lithographically patterned stacks of thin‐film structures. To address the drawbacks of conventionally used wet‐etching methods in self‐assembly techniques, here a dry‐release approach is developed to roll‐up both metallic and dielectric, as well as metallic/dielectric hybrid thin films for the fabrication of electronic and optical devices. A silicon thin film sacrificial layer on insulator is etched by dry fluorine chemistry, triggering self‐assembly of prestrained nanomembranes in a well‐controlled wafer scale fashion. More than 6000 integrated microcapacitors as well as hundreds of active microtubular optical cavities are obtained in a simultaneous self‐assembly process. The fabrication of wafer‐scale self‐assembled microdevices results in high yield, reproducibility, uniformity, and performance, which promise broad applications in microelectronics, photonics, and opto‐electronics.

show abstract

Effect of the stoichiometry of Si-rich silicon nitride thin films on their photoluminescence and structural properties

Cited by 27 publications

References 39 publications

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Blue and red light-emitting non-stoichiometric silicon nitride-based structures

Wafer‐Scale High‐Quality Microtubular Devices Fabricated via Dry‐Etching for Optical and Microelectronic Applications

Contact Info

Product

Resources

About