Effect of the substrate state on the formation of diamond film in a low temperature microwave-plasma-enhanced chemical vapor deposition system

Abstract

Effect of graphitic carbon films on diamond nucleation by microwaveplasmaenhanced chemicalvapor deposition Lowtemperature diamond deposition by microwave plasmaenhanced chemical vapor deposition Diamond films were deposited on substrates using a low temperature microwave-plasma-enhanced chemical vapor deposition system. Low temperature ͑below 500°C͒ deposition can be achieved only by making the substrate position remote from the plasma under the normal deposition condition. The substrate was untreated or was pre-treated by 30 m diamond powder. Among various substrates ͑untreated silicon, pre-treated silicon, pre-treated quartz, untreated glass, and pre-treated glass͒, pre-treated quartz and pre-treated glass enhance the diamond formation, while untreated glass gives only graphite formation even under the same deposition conditions. We understand that the better formation of diamond on pre-treated glass and pre-treated quartz was due to the existence of a diamond particle on the substrates. We also deposited diamond films on pre-treated glass at various CH 4 concentrations. The largest grain size can be acquired at 3% of CH 4 concentration and the growth rate of the film increases with increasing CH 4 concentration.

Controlled Geometry Formation of the Carbon Coils by the Substrate Pretreatment

“…These results show that the amount of the remained carbon species is largest in the case of Si substrate and the pretreatment method-A combination (sample F) than any other case. It clearly confirms that the diamond powder pretreatment on Si substrate would leave the carbon particles on the surface of the substrate [23]. Therefore, these remained carbon particles seem to effectively motivate the formation of the microsized carbon coils during the relatively short reaction time (10 minutes).…”

A review of nucleation, growth and low temperature synthesis of diamond thin films

“…Low temperature (,500 uC) deposition of diamond films was achieved by placing the substrate away from the plasma source, otherwise under the normal deposition condition (4%CH 4 , 40 torr, 1100 W). 196 Both the untreated and pretreated (by 30 mm diamond powder) substrates were used for the experiment. Among various substrates studied (untreated Si, pretreated Si, pretreated quartz, untreated glass and pretreated glass), pretreated quartz and pretreated glass enhanced the diamond formation at low temperature, while untreated glass gave only graphite formation under the same deposition conditions.…”

High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits

“…• General properties of carbon-and fluorine-doped carbon films* As mentioned previously, the development of low-k dielectric materials is of current interest in attempting to improve the performance of integrated circuits. Both conventional plasma CVD and HDP CVD carbon and F-doped carbon (F-C x ) films have been identified as excellent candidates for low-k dielectric materials for multilayer interconnections at ULSI levels of integration [16,[65][66][67].…”

“…The dielectric constants of those carbon and fluorocarbon films are reported in the range of 2.0 to 3.3, with carbon films in the upper range and fluorocarbon films in the lower range. The carbon and fluorocarbon films are generally deposited with individual precursors or a combination of various types of hydrocarbon and fluorocarbon precursors such as methane (CH 4 ), ethylene (C 2 H 4 ), CF 4 , C 2 F 6 , C4F 8 , CHF 3 with Ar and hydrogen [10,12,13,15,16,[65][66][67][68]. Other ring-type hydrocarbon fluorocarbon compounds such as benzene (C 6 H6), difluorobenzene (C 6 F 4 H 2 ), and hexafluorobenzene (C 6 F 6 ) [11,69], and even oxygenated fluorocarbon such as hexafluoropropylene oxide (HFPO, C 3 F 6 O) [14] have also been used as precursors.…”