Effect of the surface on the electron quantum size levels and electron<i>g</i>factor in spherical semiconductor nanocrystals

Rodina, A. V.; Éfros, Al. L.; Alekseev, Anton

doi:10.1103/physrevb.67.155312

Cited by 55 publications

(80 citation statements)

References 48 publications

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“…It also appears unlikely from these exact calculation of g-factors that the cancellation will become more complete for large-size nanocrystals since the difference between g z and g increases for larger nanocrystals having aspect ratio approximately unity. As a result a true quasi-spherical regime as predicted by an analysis perturbative in spin 12,14 in which the electron g-factors become isotropic may never reached. Under certain growth conditions it is possible to synthesis CdSe nanostructures with zincblende structure.…”

Section: A Electron G-factormentioning

confidence: 99%

Magneto-optical response of CdSe nanostructures

Chen

Whaley

2004

Phys. Rev. B

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We present theoretical calculations of the Landé g-factors of semiconductor nanostructures using a time-dependent empirical tight-binding method. The eigenenergies and eigenfunctions of the band edge states are calculated as a function of an external magnetic field with the electromagnetic field incorporated into the tight-binding Hamiltonian in a gauge-invariant form. The spin-orbit interaction and magnetic field are treated non-perturbatively. The g-factors are extracted from the energy splitting of the eigenstates induced by the applied magnetic field. Both electron and hole gfactors are investigated for CdSe nanostructures. The size and aspect ratio dependence of g-factors is studied. We observe that the electron g-factors are anisotropic and find that the calculated values agree quantitatively with experimental data. We conclude that the two distinct g-factor values extracted from time resolved Faraday rotation experiments should be assigned to the anisotropic in plane (g ) and out of plane (gz) electron g-factors, rather than to isotropic electron and exciton g-factors. We find that the anisotropy in the electron g-factor depends on the aspect ratio of the nanocrystal. The g-factor anisotropy derived from the wurtzite structure and from the non-unity aspect ratio may cancel each other in some regime. We observe that hole g-factors oscillate as a function of size, due to size dependent mixing between the heavy hole-light hole components of the valence band edge states. Extension to the calculation of exciton g-factors is discussed.

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Section: A Electron G-factormentioning

confidence: 99%

Magneto-optical response of CdSe nanostructures

Chen

Whaley

2004

Phys. Rev. B

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“…This modified magnetic moment also controls the spin dynamics in nanostructures, and is usually parametrized in the literature as a shape, size and composition dependent g tensor defined by μ ¼ g · S, where S represents the electron spin [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Despite the central nature of g tensors to high-speed spin manipulation [12][13][14][15]17,18], spin lifetimes [19,20], and quantum computation [21], the spatial structure of the spin-correlated orbital currents that determine these g tensors has not been investigated.…”

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confidence: 99%

Spin-Orbit-Induced Circulating Currents in a Semiconductor Nanostructure

et al. 2014

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Circulating orbital currents produced by the spin-orbit interaction for a single electron spin in a quantum dot are explicitly evaluated at zero magnetic field, along with their effect on the total magnetic moment (spin and orbital) of the electron spin. The currents are dominated by coherent superpositions of the conduction and valence envelope functions of the electronic state, are smoothly varying within the quantum dot, and are peaked roughly halfway between the dot center and edge. Thus the spatial structure of the spin contribution to the magnetic moment (which is peaked at the dot center) differs greatly from the spatial structure of the orbital contribution. Even when the spin and orbital magnetic moments cancel (for g = 0) the spin can interact strongly with local magnetic fields, e.g. from other spins, which has implications for spin lifetimes and spin manipulation.

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“…This is the so called the eight-band Kane model with dispersion for electrons only. 23,24,25 This model allows to describe electron states with energies in the conduction band. It takes into account spin-orbit effects induced by the interaction with the valence band in the presence of the structure inversion asymmetry.…”

Section: A Basic Equationsmentioning

confidence: 99%

Theory of intrinsic electric polarization and spin Hall current in spin-orbit-coupled semiconductor heterostructures

Rodina

Alekseev

2008

Phys. Rev. B

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We present Maxwell equations with source terms for the electromagnetic field interacting with a moving electron in a spin-orbit coupled semiconductor heterostructure. We start with the eight-band kp model and derive the electric and magnetic polarization vectors using the Gordon-like decomposition method. Next, we present the kp effective Lagrangian for the nonparabolic conduction band electrons interacting with electromagnetic field in semiconductor heterostructures with abrupt interfaces. This Lagrangian gives rise to the Maxwell equations with source terms and boundary conditions at heterointerfaces as well as equations for the electron envelope wave function in the external electromagnetic field together with appropriate boundary conditions. As an example, we consider spin-orbit effects caused by the structure inversion asymmetry for the conduction electron states. We compute the intrinsic contribution to the electric polarization of the steady state electron gas in asymmetric quantum well in equilibrium and in the spin Hall regime. We argue that this contribution, as well as the intrinsic spin Hall current, are not cancelled by the elastic scattering processes.

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Effect of the surface on the electron quantum size levels and electrongfactor in spherical semiconductor nanocrystals

Cited by 55 publications

References 48 publications

Magneto-optical response of CdSe nanostructures

Magneto-optical response of CdSe nanostructures

Spin-Orbit-Induced Circulating Currents in a Semiconductor Nanostructure

Theory of intrinsic electric polarization and spin Hall current in spin-orbit-coupled semiconductor heterostructures

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