2020
DOI: 10.1016/j.ceramint.2020.01.055
|View full text |Cite
|
Sign up to set email alerts
|

Effect of the thickness of Sr2Bi4Ti5O18 transition layer on the properties of BiFeO3/Sr2Bi4Ti5O18 bilayer composite thin films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7

Relationship

0
7

Authors

Journals

citations
Cited by 13 publications
(3 citation statements)
references
References 52 publications
0
3
0
Order By: Relevance
“…On the contrary, the leakage current densities of ZnO/BFO and BFO/ZnO bilayers were found to be lower than that of the BFO thin film. As the ZnO layer was added, a prominent decrease in the leakage current density was observed, which can be put down to the movement blocking of the oxygen vacancies and electrons of the ZnO layer which acted as an efficient insulator between BFO and the Pt substrates and electrodes [32]. In addition, the reducing the leakage current density may be caused by a potential barrier formed at the interface between BFO and ZnO, which blocked the conduction of carriers in the composite films [33].…”
Section: Ferroelectricity and Leakage Currentmentioning
confidence: 99%
“…On the contrary, the leakage current densities of ZnO/BFO and BFO/ZnO bilayers were found to be lower than that of the BFO thin film. As the ZnO layer was added, a prominent decrease in the leakage current density was observed, which can be put down to the movement blocking of the oxygen vacancies and electrons of the ZnO layer which acted as an efficient insulator between BFO and the Pt substrates and electrodes [32]. In addition, the reducing the leakage current density may be caused by a potential barrier formed at the interface between BFO and ZnO, which blocked the conduction of carriers in the composite films [33].…”
Section: Ferroelectricity and Leakage Currentmentioning
confidence: 99%
“…As a result, ferroelectric solid solutions in bulk configuration and heterostructures in thin-film configuration always perform better overcoming the drawbacks of individual constituents for practical device applications. 4,5 Ferroelectric solid solutions have gained unprecedented importance for dielectric, piezoelectric, and ferroelectric applications owing to their superior physical properties compared to individual ferroelectric electro-ceramic material systems. However, the choice of high-performance ferroelectric solid solutions has been strictly limited to very few material compositions either due to a lack of rigorous research investigations or material-specific limitations.…”
Section: Introductionmentioning
confidence: 99%
“…Despite several decades of research effort, there is no unique ferroelectric material system suitable for all possible ferroelectric devices due to their associated merits and demerits. As a result, ferroelectric solid solutions in bulk configuration and heterostructures in thin‐film configuration always perform better overcoming the drawbacks of individual constituents for practical device applications 4,5 . Ferroelectric solid solutions have gained unprecedented importance for dielectric, piezoelectric, and ferroelectric applications owing to their superior physical properties compared to individual ferroelectric electro‐ceramic material systems.…”
Section: Introductionmentioning
confidence: 99%