Effect of the thickness of amorphous silicon intermediate layer on the thermal transport of silicon/diamond interface

Qu, Yongfeng; Yuan, Jian; Deng, Ningkang; Hu, Wenbo; Wu, Shengli; Wang, Hong-Xing

doi:10.1016/j.rinp.2023.106827

Results in Physics

2023

DOI: 10.1016/j.rinp.2023.106827

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Effect of the thickness of amorphous silicon intermediate layer on the thermal transport of silicon/diamond interface

Yongfeng Qu

Jian Yuan

Ningkang Deng

et al.

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Cited by 4 publications

References 29 publications

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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Malakoutian,

Woo,

Rich

et al. 2024

Adv Elect Materials

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Advancing Silicon (Si) technology beyond Moore's law through 3D architectures requires highly efficient heat management methods compatible with foundry processes. While continued increases in transistor density can be achieved through 3D architectures, self‐heating in the upper tiers degrades the performance. Self‐heating is a critical problem for high‐power, high‐frequency, wide bandgap, and ultra‐wide bandgap devices as well. Diamond, known for its exceptional thermal conductivity, offers a viable solution in both these cases. Since thermal boundary resistance (between the channel/junction and diamond plays a crucial role in overall thermal resistance, this study investigates various dielectrics for interface engineering, such as Silicon dioxide (SiO2), amorphous‐ Silicon Carbide (a‐SiC), and Silicon Nitride (SiNx), to make a phonon bridge at gallium nitride (GaN)‐diamond and Si‐diamond interfaces. The a‐SiC interlayer reduces diamond/GaN (<5 m2K per GW) and diamond/Si (<2 m2K per GW) thermal boundary resistances by linking low‐ and high‐frequency phonons, boosting phonon transport through the interface. Engineered interfaces enhance heat spreading from the channel/junction and rule out premature failure.

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Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Malakoutian,

Woo,

Rich

et al. 2024

Adv Elect Materials

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show abstract

Structural and phonon transport analysis of surface-activated bonded SiC-SiC homogenous interfaces

Zhao,

Qu,

Deng

et al. 2024

Applied Surface Science

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Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations

Zhao,

2024

Surfaces and Interfaces

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Effect of the thickness of amorphous silicon intermediate layer on the thermal transport of silicon/diamond interface

Cited by 4 publications

References 29 publications

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Lossless Phonon Transition Through GaN‐Diamond and Si‐Diamond Interfaces

Structural and phonon transport analysis of surface-activated bonded SiC-SiC homogenous interfaces

Progress in the semiconductor/diamond heterogeneous integrations: Technical methods, interfacial phonon transport, and thermal characterizations

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