Effect of thermal annealing on the luminescent characteristics of CdSe/ZnSe quantum dot heterostructure

Abstract

Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures (T ann  270 ºС) results in an increase by a factor of 2-3 of the intensity of two photoluminescence bands observed, the first being caused by excitonic transitions in QDs and the second one being connected with the defect complex including a column II vacancy. The effect is supposed to be caused by annealing of as-grown nonradiative defects. Annealing at higher temperatures (T ann > 270 ºС) stimulates a decrease of the QD photoluminescence band intensity and up to 100 meV blue shift of its peak position. The former is explained by generation of extended defects and reduction of the QD density. The blue shift observed at 370-430 ºС is ascribed to diffusion of cadmium from QDs that also results in reduction of the QD density. It is found that the energy of excitonic transitions in the wetting layer does not change upon annealing. Lower thermal stability of QDs as compared to that of the wetting layer has been explained by strain-enhanced lateral Cd/Zn interdiffusion via vacancies. The presence of column II vacancies in the wetting layer is proved by characteristics of defect-related PL band and its excitation spectra.

Photoluminescence Enhancement of CdSe Quantum Dots: A Case of Organogel–Nanoparticle Symbiosis

“…It must be noted that the QD–organogels obtained by addition of the QDs after complete solubilization of 1 were found to preserve the QDs photophysical properties better than if the QD-doped organogels were obtained by directly mixing 1 with the QDs and toluene, followed by heating the solution to dissolve 1 . This is because the properties of QDs are known to be sensitive to temperature and oxygen . Thus, prolonged heating of the QDs in the presence of the gelator should be avoided to obtain homogeneous luminescent samples.…”

A review on the progress of ZnSe as inorganic scintillator

“…Post-growth thermal treatment of CdSe /ZnSe quantum dot heterostructures have shown up to a 100 meV blue shift of band position and of 2-3 times increase in luminescence intensity. [113]. Similar results have been reported by various research groups who studied the effect of annealing on luminescent properties of quantum wells [114][115][116][117].…”